參數(shù)資料
型號(hào)： RFD15N06LE
廠商： INTERSIL CORP
元件分類(lèi)： JFETs
英文描述： 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs(15A, 60V, 0.065 Ω,邏輯電平,N溝道功率MOS場(chǎng)效應(yīng)管)
中文描述： 15 A, 60 V, 0.065 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁(yè)數(shù)： 4/8頁(yè)
文件大?。?/td> 95K
代理商： RFD15N06LE
6-152
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
10
50
1
0.001
I
A
,
t
AV
, TIME IN AVALANCHE (ms)
0.1
1
10
0.01
STARTING T
J
= 150
o
C
t
AV
= (L)(I
AS
)/(1.3*RATED BV
DSS
- V
DD
)
If R
≠
0
t
AV
= (L/R)ln[(I
AS
*R)/(1.3*RATED BV
DSS
- V
DD
) +1]
If R = 0
STARTING T
J
= 25
o
C
0
10
20
0
1.5
3.0
4.5
6.0
15
30
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
25
5
V
GS
= 2.5V
V
GS
= 3V
V
GS
= 3.5V
V
GS
= 4V
V
GS
= 10V
T
C
= 25
o
C
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
V
GS
= 5V
0
3
4.5
6
1.5
0
10
15
20
30
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
25
5
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 15V
175
o
C
-55
o
C
25
o
C
50
100
150
200
0
3.0
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
D
,
2.0
3.5
4.5
5.0
4.0
2.5
I
D
= 30A
I
D
= 15A
I
D
= 7.5A
I
D
= 3.75A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
O
100
20
30
40
50
0
250
200
150
50
0
10
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
DD
= 30 V, I
D
=15A, R
L
= 2.00
t
d(OFF)
t
r
t
f
t
d(ON)
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
2.5
200
I
D
= 15A
V
GS
= 5V,
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX.
O
RFD15N06LE, RFD15N06LESM
相關(guān)PDF資料
PDF描述
RFD15N06LESM 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs(15A, 60V, 0.065 Ω,邏輯電平,N溝道功率MOS場(chǎng)效應(yīng)管)
RFD15P05SM 15A, 50V, 0.150 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 Ω,P溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
RFD15P05 15A, 50V, 0.150 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 Ω,P溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管)
RFD15P06SM 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs(15A, 60V, 0.150 Ω,P溝道功率MOS場(chǎng)效應(yīng)管)
RFD15P06 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs(15A, 60V, 0.150 Ω,P溝道功率MOS場(chǎng)效應(yīng)管)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFD15N06LESM 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Harris Corporation 功能描述:
RFD15P05 功能描述:MOSFET TO-251AA P-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD15P05SM 功能描述:MOSFET TO-252AA P-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD15P05SM9A 功能描述:MOSFET TO-252 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD15P06 制造商:INTERSIL 制造商全稱(chēng):Intersil Corporation 功能描述:15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs
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