參數(shù)資料
型號(hào)： RFD10P03LSM
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET(10A, 30V, 0.200 Ω,P溝道功率MOS場(chǎng)效應(yīng)管)
中文描述： 10 A, 30 V, 0.22 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁(yè)數(shù)： 4/8頁(yè)
文件大?。?/td> 133K
代理商： RFD10P03LSM
7-6
NOTE: Refer to Intersil Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
-50
-10
-1
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
I
A
,
IF R
≠
0
t
AV
= (L/R) ln [(I
AS
*R)/(1.3 RATED BV
DSS
- V
DD
) + 1]
STARTING T
J
= 150
o
C
STARTING T
J
= 25
o
C
t
AV
= (L) (I
AS
)/(1.3 RATED BV
DSS
- V
DD
)
If R = 0
0
0
-1
-2
-3
-5
-10
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= -10V
-4
-20
-15
-25
-5
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
V
GS
= -4V
V
GS
= -3.5V
V
GS
= -3V
V
GS
= -5V
0
-3.0
-4.5
-6.0
-1.5
0
-10
175
o
C
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
-55
o
C
25
o
C
-20
-25
-15
-5
PULSE DURATION = 250
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= -15V
r
D
D
0
100
200
300
400
-2
-4
-6
-8
-10
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= -20A
I
D
= -10A
I
D
= -5A
I
D
= -2.5A
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
T
C
= 25
C
N
2.0
0.5
0
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
1.0
80
1.5
160
200
-80
V
GS
= -5V, I
D
= -10A
O
PULSE DURATION = 80
s
DUTY CYCLE = 0.5% MAX
N
1.2
1.0
0.9
0.8
-40
0
40
T
J
, JUNCTION TEMPERATURE (
o
C)
120
1.1
80
B
-80
160
200
I
D
=- 250uA
RFD10P03L, RFD10P03LSM, RFP10P03L
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFD10P03LSM9A 制造商:HARRIS 制造商全稱:HARRIS 功能描述:10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET
RFD12N06RLE 功能描述:MOSFET 60V/12a/0.135Ohm NCh Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD12N06RLE 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC I-PAK
RFD12N06RLESM 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:60V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:49W ;RoHS Compliant: Yes
RFD12N06RLESM9A 功能描述:MOSFET 60V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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