參數(shù)資料
型號(hào)： RFD10P03L
廠商： HARRIS SEMICONDUCTOR
元件分類： JFETs
英文描述： 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET(10A, 30V, 0.200 Ω,P溝道功率MOS場(chǎng)效應(yīng)管)
中文描述： 10 A, 30 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA
文件頁數(shù)： 3/8頁
文件大?。?/td> 133K
代理商： RFD10P03L
7-5
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. PEAK CURRENT CAPABILITY
T
C
, CASE TEMPERATURE (
o
C)
P
0
0
25
50
75
100
175
0.2
0.4
0.6
0.8
1.0
1.2
125
150
-4
-2
0
25
50
75
100
125
150
-8
I
D
,
T
C
, CASE TEMPERATURE (
o
C)
-12
-6
175
-10
t, RECTANGULAR PULSE DURATION (s)
10
1
Z
θ
J
,
10
-3
10
-2
10
-1
10
0
10
-5
10
-4
1.0
0.01
0.1
NOTES: DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JC
x R
θ
JC
+ T
C
P
DM
t
1
t
2
0.1
0.02
0.01
0.2
0.5
0.05
SINGLE PULSE
2.0
-100
-10
-1
-1
-10
-100
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
V
DSS
MAX = -30V
100ms
DC
T
J
= MAX RATED
T
C
= 25
C
10ms
1ms
100
μ
s
10
-5
10
-4
10
-3
t, PULSE WIDTH (s)
10
-2
10
-1
10
0
10
1
-10
I
D
,
V
GS
= -10V
V
GS
= -5V
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES ABOVE 25
o
C
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
-5
I
I25
175
-------150
–
=
T
C
= 25
o
C
-100
RFD10P03L, RFD10P03LSM, RFP10P03L
相關(guān)PDF資料
PDF描述
RFD10P03LSM 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET(10A, 30V, 0.200 Ω,P溝道功率MOS場(chǎng)效應(yīng)管)
RFP10P15 P-Channel Power MOSFET(P溝道增強(qiáng)模式功率MOS場(chǎng)效應(yīng)管)
RFP12N08 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs
RFP12N10 12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs
RFP12N18 12A, 180V and 200V, 0.250 Ohm, N-Channel Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RFD10P03LSM 功能描述:MOSFET TO-252AA P-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD10P03LSM9A 制造商:HARRIS 制造商全稱:HARRIS 功能描述:10A, 30V, 0.200 ohm, Logic Level P-Channel Power MOSFET
RFD12N06RLE 功能描述:MOSFET 60V/12a/0.135Ohm NCh Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RFD12N06RLE 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO 制造商:Intersil Corporation 功能描述:MOSFET N LOGIC I-PAK
RFD12N06RLESM 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D-PAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:60V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:49W ;RoHS Compliant: Yes
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