參數(shù)資料
型號(hào)： RFD10P03
廠商： Fairchild Semiconductor Corporation
英文描述： 10A, 30V, 0.200W, Logic Level P-Channel Power MOSFET
中文描述： 10A條，30V的，0.200W，邏輯電平P溝道功率MOSFET
文件頁(yè)數(shù)： 2/12頁(yè)
文件大小： 272K
代理商： RFD10P03
2
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RFD10P03L, RFD10P03LSM,
RFP10P03L
-30
-30
±
10
UNITS
V
V
V
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage (R
GS
= 20K
)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Single Pulse Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
AS
Power Dissipation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Derate Above 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(0.063in (1.6mm) from case for 10s)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
10
See Figure 5
Refer to UIS Curve
65
0.43
-55 to 175
300
A
W
W/
o
C
o
C
o
C
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= -30V,
V
GS
= 0V
V
GS
=
±
10V
I
D
= 10A, V
GS
= -5V
I
D
= 10A, V
GS
= -4.5V
V
DD
= 15V, I
D
10A
R
L
= 1.5
, R
GS
= 5
,
V
GS
= -5V
-30
-
-
V
Gate Threshold Voltage
-1
-
-2
V
Zero Gate Voltage Drain Current
T
C
= 25
o
C
T
C
= 150
o
C
-
-
-1
μ
A
-
-
-50
μ
A
Gate to Source Leakage Current
I
GSS
r
DS(ON)
-
-
±
100
nA
Drain to Source On Resistance
(Note 1)
-
-
0.200
0.220
Turn-On Time
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(-5)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
-
-
100
ns
Turn-On Delay Time
-
15
-
ns
Rise Time
-
50
-
ns
Turn-Off Delay Time
-
35
-
ns
Fall Time
-
20
-
ns
Turn-Off Time
-
-
80
ns
Total Gate Charge
V
GS
= 0 to -10V
V
GS
= 0 to -5V
V
GS
= 0 to -1V
V
DS
= -25V, V
GS
= 0V
f = 1MHz
V
DD
= -24V,
I
D
10A,
R
L
= 2.4
-
25
30
nC
Gate Charge at -5V
-
13
16
nC
Threshold Gate Charge
-
1.2
1.5
nC
Input Capacitance
-
1035
-
pF
Output Capacitance
-
340
-
pF
Reverse Transfer Capacitance
-
35
-
pF
Thermal Resistance, Junction to Case
-
-
2.30
o
C/W
o
C/W
o
C/W
Thermal Resistance, Junction to Ambient
RFD10P03L, RFD10P03LSM
-
-
100
RFP10P03L
80
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Forward Voltage
V
SD
I
SD
= -10A
-
-
-1.5
V
Reverse Recovery Time
t
rr
I
SD
= -10A, dI
SD
/dt = -100A/
μ
s
-
-
75
ns
NOTE:
1. Pulse Test: Pulse width
≤
300
μ
s, Duty Cycle
≤
2%.
RFD10P03L, RFD10P03LSM, RFP10P03L
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