參數資料
型號： RF3S49092SM
廠商： INTERSIL CORP
元件分類： JFETs
英文描述： 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET
中文描述： 20 A, 12 V, 0.06 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-169AB
文件頁數： 2/13頁
文件大小： 244K
代理商： RF3S49092SM
4-31
Absolute Maximum Ratings
T
C
= 25
o
C Unless Otherwise Specified
N-CHANNEL
12
12
±
10
P-CHANNEL
-12
-12
±
10
UNITS
V
V
V
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . .V
DSS
Drain to Gate Voltage (R
GS
= 20k
, Note 1). . . . . . . . .V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .V
GS
Drain Current
Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed (Figures 5, 26) . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating (Figures 6, 27). . . . . . . . . . . . . E
AS
Power Dissipation
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . T
J
, T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . T
L
Package Body for 10s, See Techbrief 334 . . . . . . . . . .T
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
20
Refer to Peak Current Curve
Refer to UIS Curve
10
Refer to Peak Current Curve
Refer to UIS Curve
A
50
0.33
50
0.33
W
W/
o
C
o
C
-55 to 175
-55 to 175
300
260
300
260
o
C
o
C
NOTE:
1. T
J
= 25
o
C to 150
o
C.
Electrical Specifications (N-Channel)
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V, (Figure 13)
V
GS
= V
DS
, I
D
= 250
μ
A, (Figure 12)
V
DS
= 12V,
V
GS
= 0V
12
-
-
V
Gate Threshold Voltage
1
-
-
V
Zero Gate Voltage Drain Current
T
C
= 25
o
C
T
C
= 150
o
C
-
-
1
μ
A
-
-
50
μ
A
Gate to Source Leakage Current
I
GSS
r
DS(ON)
t
ON
t
d(ON)
t
r
t
d(OFF)
t
f
t
OFF
Q
g(TOT)
Q
g(5)
Q
g(TH)
C
ISS
C
OSS
C
RSS
R
θ
JC
R
θ
JA
V
GS
=
±
10V
I
D
= 20A, V
GS
= 5V, (Figure 9, 11)
V
DD
= 6V, I
D
≈
20A, R
L
= 0.24
,
V
GS
= 5V, R
GS
= 25
(Figure 10)
-
-
±
100
nA
Drain to Source On Resistance
-
-
0.060
Turn-On Time
-
-
100
ns
Turn-On Delay Time
-
18
-
ns
Rise Time
-
60
-
ns
Turn-Off Delay Time
-
50
-
ns
Fall Time
-
60
-
ns
Turn-Off Time
-
-
140
ns
Total Gate Charge
V
GS
= 0V to 10V
V
GS
= 0V to 5V
V
GS
= 0V to 1V
V
DS
= 10V, V
GS
= 0V, f = 1MHz
(Figure 14)
V
DD
= 9.6V,
I
D
= 20A,
R
L
= 0.42
(Figure 15)
-
20
25
nC
Gate Charge at 5V
-
12
15
nC
Threshold Gate Charge
-
0.9
1.2
nC
Input Capacitance
-
750
-
pF
Output Capacitance
-
700
-
pF
Reverse Transfer Capacitance
-
275
-
pF
Thermal Resistance Junction to Case
-
-
3.00
o
C/W
o
C/W
Thermal Resistance Junction to Ambient
TS-001AA, and MO-169AB
-
-
62
N-Channel Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Voltage
V
SD
I
SD
= 20A
-
-
1.5
V
Reverse Recovery Time
t
rr
I
SD
= 20A, dI
SD
/dt = 100A/
μ
s
-
-
100
ns
RF3V49092, RF3S49092SM
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