參數(shù)資料
型號: RF3S49092SM
廠商: INTERSIL CORP
元件分類: JFETs
英文描述: 20A/10A, 12V, 0.060/0.140 Ohm, Logic Level, Complementary Power MOSFET
中文描述: 20 A, 12 V, 0.06 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET, MO-169AB
文件頁數(shù): 13/13頁
文件大?。?/td> 244K
代理商: RF3S49092SM
4-42
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ISO9000
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Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
www.intersil.com
PSPICE Electrical Model
SUBCKT RF3V49092 2 1 3 ;
P-Channel Model rev 11/8/94
CA 12 8 8.75e-10
CB 15 14 8.65e-10
CIN 6 8 7.65e-10
DBODY 5 7 DBDMOD
DBREAK 7 11 DBKMOD
DPLCAP 10 6 DPLCAPMOD
EBREAK 5 11 17 18 -23.75
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 5 10 8 6 1
EVTO 20 6 8 18 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 1.233e-9
LSOURCE 3 7 0.452e-9
MOS1 16 6 8 8 MOSMOD M = 0.99
MOS2 16 21 8 8 MOSMOD M = 0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 7.36e-3
RGATE 9 20 6.1
RIN 6 8 1e9
RSOURCE 8 7 RDSMOD 4.56e-2
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 -0.558
.MODEL DBDMOD D (IS = 3.0e-13 RS = 4.4e-2 TRS1 = 1.0e-3 TRS2 = -7.37e-6 CJO = 1.27e-9 TT = 2.2e-8)
.MODEL DBKMOD D (RS = 7.84e-2 TRS1 = -4.27e-3 TRS2 = 5.77e-5)
.MODEL DPLCAPMOD D (CJO = 2.85e-10 IS = 1e-30 N = 10)
.MODEL MOSMOD PMOS (VTO = -2.1423 KP = 9.206 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 9.61e-4 TC2 = -1.09e-6)
.MODEL RDSMOD RES (TC1 = 2.10e-3 TC2 = 6.99e-6)
.MODEL RVTOMOD RES (TC1 = -1.82e-3 TC2 = 1.47e-7)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 5.47 VOFF= 3.47)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 3.47 VOFF= 5.47)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.05 VOFF= -3.95)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.95 VOFF= 1.05)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-circuit for the Power MOSFET Featuring Global Temperature
Options
; IEEE Power Electronics Specialist Conference Records, 1991.
1
GATE
LGATE RGATE
EVTO
8
18
+
12
13
8
14
13
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
RIN
CIN
MOS1
MOS2
RDRAIN
DBREAK
EBREAK
DBODY
LDRAIN
DRAIN
2
RSOURCE
LSOURCE
SOURCE
RBREAK
RVTO
VBAT
+
IT
VTO
ESG
8
6
DPLCAP
6
10
5
16
21
11
17
18
8
14
5
8
6
8
7
3
17
18
19
+
+
+
+
+
20
9
RF3V49092, RF3S49092SM
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