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參數(shù)資料
| 型號(hào)： | RF2131 |
| 廠商： | RF MICRO DEVICES INC |
| 元件分類： | 衰減器 |
| 英文描述： | HIGH EFFICIENCY AMPS/ETACS AMPLIFIER |
| 中文描述： | 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER |
| 封裝： | SOP-16 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大小： | 84K |
| 代理商： | RF2131 |
2-100
RF2131
Rev B4 010417
2
P
Absolute Maximum Ratings
Parameter
Supply Voltage
Power Control Voltage (V
PC
)
DC Supply Current
Input RF Power
Output Load VSWR
Operating Case Temperature
Ambient Operating Temperature
Storage Temperature
Rating
-0.5 to +8.5
-0.5 to +4.5
570
+12
10:1
-40 to +100
-40 to +85
-40 to +150
Unit
V
DC
V
mA
dBm
°C
°C
°C
Parameter
Specification
Typ.
Unit
Condition
Min.
Max.
Overall
T=25°C, V
CC
=4.8V, V
PC
set for
P
OUT
=+31dBm, Freq=836MHz
As configured in Application schematics
Operating Frequency Range
Usable Frequency Range
Maximum CW Output Power
Total CW Efficiency
DC Current at 1.2W Output
Input Power for 1.2W output
Noise Power Output
824 to 849
800 to 950
+31
64
400
+6
-90
MHz
MHz
dBm
%
mA
dBm
+30.5
55
Depends on output matching
At Max Output
As configured in Application Circuit #1
+8
-85
dBm/30kHz
In 869 - 894 MHz band (any gain or input
power setting)
V
PC
=0V, Input Power=+6dBm
Depends upon external matching. Second
harmonic levels directly from the IC are
approximately 20 to 25dBc
OFF Isolation
Second Harmonic
20
25
-30
dB
dBc
-25
Input VSWR
Input Impedance
Power Down Control
Turn On/Off Time
V
PC
“OFF” Voltage
V
PC
“ON” Voltage
Power Supply
Voltage
Voltage
<2:1
50
100
ns
V
V
0.2
0.5
3.6
4.0
4.8
V
V
Specifications
Operating Limits
4.0
7.0
Caution!
ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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| RF2131PCBA | 制造商:RFMD 制造商全稱:RF Micro Devices 功能描述:HIGH EFFICIENCY AMPS/ETACS AMPLIFIER |
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