- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄374582 > RF1K49090 (INTERSIL CORP) Dual N-Channel power MOSFET(雙路N溝道功率MOS場效應(yīng)管) PDF資料下載
參數(shù)資料
| 型號： | RF1K49090 |
| 廠商： | INTERSIL CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N-Channel power MOSFET(雙路N溝道功率MOS場效應(yīng)管) |
| 中文描述： | 3.5 A, 12 V, 0.05 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA |
| 文件頁數(shù)： | 7/7頁 |
| 文件大小： | 127K |
| 代理商： | RF1K49090 |
8-107
All Intersil semiconductor products are manufactured, assembled and tested under
ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site
http://www.intersil.com
PSPICE Electrical Model
SUBCKT RF1K49090 2 1 3 ;
rev 9/6/94
CA 12 8 9.77e-10
CB 15 14 9.19e-10
CIN 6 8 7.81e-10
DBODY 7 5 DBDMOD
DBREAK 5 11 DBKMOD
DPLCAP 10 5 DPLCAPMOD
EBREAK 11 7 17 18 14.89
EDS 14 8 5 8 1
EGS 13 8 6 8 1
ESG 6 10 6 8 1
EVTO 20 6 18 8 1
IT 8 17 1
LDRAIN 2 5 1e-9
LGATE 1 9 1.233e-9
LSOURCE 3 7 0.452e-9
MOS1 16 6 8 8 MOSMOD M = 0.99
MOS2 16 21 8 8 MOSMOD M = 0.01
RBREAK 17 18 RBKMOD 1
RDRAIN 5 16 RDSMOD 4.91e-3
RGATE 9 20 2.74
RIN 6 8 1e9
RSOURCE 8 7 RDSMOD 5e-3
RVTO 18 19 RVTOMOD 1
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.3215
.MODEL DBDMOD D (IS = 7.00e-13 RS = 2.15e-2 TRS1 = 0.5e-3 TRS2 = 3.68e-6 CJO = 1.28e-9 TT = 1.8e-8)
.MODEL DBKMOD D (RS = 1.28e-1 TRS1 = 1.69e-3 TRS2 = -2.0e-6)
.MODEL DPLCAPMOD D (CJO = 0.84e-9 IS = 1e-30 N = 10)
.MODEL MOSMOD NMOS (VTO = 1.63 KP = 11.55 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 9.15e-4 TC2 = 3.13e-7)
.MODEL RDSMOD RES (TC1 = 7.00e-4 TC2 = 5.00e-6)
.MODEL RVTOMOD RES (TC1 = -2.155e-3 TC2 = -2.7e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -6.05 VOFF= -4.05)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.05 VOFF= -6.05)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -0.72 VOFF= 4.28)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 4.28 VOFF= -0.72)
.ENDS
NOTE: For further discussion of the PSPICE model, consult
A New PSPICE Sub-circuit for the Power MOSFET Featuring Global
Temperature Options
; IEEE Power Electronics Specialist Conference Records, 1991.
10
DPLCAP
RDRAIN
DBREAK
LDRAIN
DRAIN
2
SOURCE
LSOURCE
DBODY
RBREAK
RVTO
VBAT
+
-
19
IT
RSOURCE
EBREAK
MOS2
EDS
EGS
RIN
CIN
VTO
ESG
S1A
S2A
14
13
S2B
S1B
CB
CA
EVTO
+
18
8
RGATE
GATE
1
LGATE
5
18
17
7
11
21
8
6
16
20
9
12
15
14
13
13
8
+
-
+
-
+
-
-
+
-
+
-
MOS1
3
6
8
5
8
6
8
17
18
RF1K49090
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RF1K4909296 | TRANSISTOR | MOSFET | PAIR | COMPLEMENTARY | 12V V(BR)DSS | 3.5A I(D) | SO |
| RF1K49092 | 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET⑩ Power MOSFET |
| RF1K49092 | Logic Level Complementary power MOSFET(邏輯電平可補(bǔ)償功率MOS場效應(yīng)管) |
| RF1K49093 | 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET⑩ Power MOSFET |
| RF1K49154 | 2A, 60V, 0.130 Ohm, Dual N-Channel, LittleFET⑩ Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RF1K4909096 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K49092 | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K4909296 | 功能描述:MOSFET USE 512-FDS9934C RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K49093 | 功能描述:MOSFET SOIC-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| RF1K4909396 | 功能描述:MOSFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。