參數(shù)資料
型號(hào)： RF1K49088
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 3.5A, 30V, Avalanche Rated, Logic Level, Dual N-Channel LittleFET⑩ Enhancement Mode Power MOSFET
中文描述： 3.5 A, 30 V, 0.06 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
文件頁數(shù)： 2/7頁
文件大小： 153K
代理商： RF1K49088
5-59
Absolute Maximum Ratings
T
A
= 25
o
C Unless Otherwise Specified
RF1K49088
30
30
±
10
UNITS
V
V
V
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DSS
Drain to Gate Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (Pulse Width = 5s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
Pulsed. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
DM
Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation
T
A
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Derate Above 25
o
C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
L
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
3.5
Refer to Peak Current Curve
Refer to UIS Curve
A
2
0.016
-55 to 150
260
W
W/
o
C
o
C
o
C
Electrical Specifications
T
A
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V
30
-
-
V
Gate Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A
1
-
2
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30V,
V
GS
= 0V
T
A
= 25
o
C
-
-
1
μ
A
T
A
= 150
o
C
-
-
50
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
10V
-
-
100
nA
On Resistance
r
DS(ON)
I
D
= 3.5A, V
GS
= 5V
-
-
0.060
Turn-On Time
t
ON
V
DD
= 15V, I
D
= 3.5A,
R
L
= 4.29
, V
GS
= 5V,
R
GS
= 25
-
-
100
ns
Turn-On Delay Time
t
d(ON)
-
18
-
ns
Rise Time
t
r
-
60
-
ns
Turn-Off Delay Time
t
d(OFF)
-
53
-
ns
Fall Time
t
f
-
47
-
ns
Turn-Off Time
t
OFF
-
-
125
ns
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 10V
V
DD
= 24V,
I
D
= 3.5A,
R
L
= 6.86
-
24
30
nC
Gate Charge at 5V
Q
g(5)
V
GS
= 0V to 5V
-
13
17
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 1V
-
0.8
1.0
nC
Input Capacitance
C
ISS
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
750
-
pF
Output Capacitance
C
OSS
-
275
-
pF
Reverse Transfer Capacitance
C
RSS
-
100
-
pF
Thermal Resistance Junction-to-Ambient
R
θ
JA
Pulse width = 1s
Device mounted on FR-4 material
-
-
62.5
o
C/W
Source to Drain Diode Ratings and Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Forward Voltage
V
SD
I
SD
= 3.5A
-
-
1.25
V
Reverse Recovery Time
t
rr
I
SD
= 3.5A, dI
SD
/dt = 100A/
μ
s
-
-
50
ns
RF1K49088
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
RF1K4908896 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 30V V(BR)DSS | 3.5A I(D) | SO
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RF1K4909096 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K49092 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
RF1K4909296 功能描述:MOSFET USE 512-FDS9934C RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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