參數(shù)資料
型號: RD28F6408W30T85
廠商: INTEL CORP
元件分類: 存儲器
英文描述: 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM (W30)
中文描述: SPECIALTY MEMORY CIRCUIT, PBGA80
封裝: 14 X 8 MM, 0.80 MM PITCH, STACK, CSP-80
文件頁數(shù): 43/82頁
文件大?。?/td> 749K
代理商: RD28F6408W30T85
28F6408W30, 28F3204W30, 28F320W30, 28F640W30
Preliminary
37
NOTES:
1. All currents are RMS unless noted. Typical values at typical V
, T
= +25
°
C.
2. Automatic Power Savings (APS) reduces I
to approximately standby levels in static operation.
3. The burst wrap bit (CR.3) determines whether 4-, or 8-word burst accesses wrap within the burst-length
boundary, or whether they cross word-length boundaries to perform linear accesses. In the no-wrap mode
(CR.3 = 1), the device operates similar to continuous linear burst mode, but consumes less power.
4. Sampled, not 100% tested.
5. V
CC
read + program current is the summation of V
read and V
program currents.
6. V
CC
read + erase current is the summation of V
read and V
block erase currents.
7. I
CCES
is specified with device deselected. If device is read while in erase suspend, current draw is sum of
I
and I
.
8. Erase and program operations are inhibited when V
PP
V
PPLK
and not guaranteed outside valid V
PP1
and
V
PP2
ranges.
9. V
can undershoot to
0.4 V and V
IH
can overshoot to V
CCQ
+ 0.4 V for durations of 20 ns or less. AC I/O
Test Conditions
I
PPS
(I
PPWS,
I
PPES
)
V
PP
Standby Current
V
Program Suspend
Current
V
PP
Erase Suspend Current
Flash
4
0.2
5
μA
V
PP1
V
CC
I
PPR
V
PP
Read Current
Flash
2
15
μA
V
PP
V
CC
I
PPW
V
PP
Program Current
Flash
4
0.05
0.10
mA
V
PP
= V
PP1
8
22
V
PP
= V
PP2
I
PPE
V
PP
Erase Current
Flash
4
0.05
0.10
mA
V
PP
= V
PP1
8
22
V
PP
= V
PP2
V
IL
Input Low Voltage
Flash /
SRAM
9
0
0.4
V
V
IH
Input High Voltage
Flash /
SRAM
9
V
- 0.4
V
CCQ
V
V
OL
Output Low Voltage
Flash /
SRAM
0.1
V
V
CC
= V
CC
Min
V
CCQ
= V
CCQ
Min
I
OL
= 100 μA
V
OH
Output High Voltage
Flash /
SRAM
V
- 0.1
V
V
CC
= V
CC
Min
V
CCQ
= V
CCQ
Min
I
OH
=
100 μA
V
PPLK
V
PP
Lock-Out Voltage
Flash
8
0.4
V
V
LKO
V
CC
Lock Voltage
Flash
1.0
V
V
LKOQ
V
CCQ
Lock-Out Voltage
Flash
0.90
V
Sym
Parameter
(1)
Devic
e
Note
Min
Typ
Max
Unit
Test Condition
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