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參數(shù)資料
| 型號： | RB521S30T1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | Schottky Barrier Diode |
| 中文描述： | 0.2 A, 30 V, SILICON, SIGNAL DIODE |
| 封裝： | MINIATURE, PLASTIC, CASE 502-01, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 32K |
| 代理商： | RB521S30T1 |
Semiconductor Components Industries, LLC, 2003
November, 2003 Rev. 2
1
Publication Order Number:
RB521S30T1/D
RB521S30T1
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Extremely Fast Switching Speed
Extremely Low Forward Voltage 0.5 V (max) @ I
F
= 200 mA
Low Reverse Current
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
V
R
30
Vdc
Forward Current DC
I
F
200
mA
ESD Rating: Class 1C per Human Body Model
ESD Rating:
Class C per Machine Model
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR5 Board,
(Note 1) T
A
= 25
°
C
Derate above 25
°
C
P
D
200
1.57
mW
mW/
°
C
Thermal Resistance JunctiontoAmbient
R
JA
635
°
C/W
Junction and Storage
Temperature Range
T
J
, T
stg
55 to +125
°
C
1. FR5 Minimum Pad
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Leakage
(V
R
= 10 V)
I
R
30.0
A
Forward Voltage
(I
F
= 200 mA)
V
F
0.50
Vdc
30 V SCHOTTKY
BARRIER DIODE
Device
Package
Shipping
ORDERING INFORMATION
RB521S30T1
SOD523
4 mm Pitch
3000/Tape & Reel
SOD523
CASE 502
PLASTIC
2
1
1
CATHODE
2
ANODE
5M
d
5M = Specific Device Code
d
= Date Code
MARKING DIAGRAM
RB521S30T5
SOD523
2 mm Pitch
8000/Tape & Reel
http://onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
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PDF描述 |
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| RB521S30T5 | Schottky Barrier Diode |
| RB751S40T1 | Schottky Barrier Diode |
| RB751S40T1G | Schottky Barrier Diode |
| RB751S40TD | Schottky Barrier Diode |
| RB751V40T1 | 40 V SCHOTTKY BARRIER DIODE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RB521S30T1/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Schottky Barrier Diode |
| RB521S30T1_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Schottky Barrier Diode |
| RB521S30T1G | 功能描述:肖特基二極管與整流器 30V 200mW Single RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| RB521S30T5 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Schottky Barrier Diode |
| RB521S30T5G | 功能描述:肖特基二極管與整流器 SCHOTTKY DIODE RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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