參數(shù)資料
型號: RB521CS30L
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: 100 mA low V_F MEGA Schottky barrier rectifier
中文描述: 0.1 A, 30 V, SILICON, SIGNAL DIODE
封裝: 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC PACKAGE-2
文件頁數(shù): 8/13頁
文件大小: 140K
代理商: RB521CS30L
RB521CS30L
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 24 January 2011
8 of 13
NXP Semiconductors
RB521CS30L
100 mA low V
F
MEGA Schottky barrier rectifier
8. Test information
The current ratings for the typical waveforms as shown in
Figure 8
,
9
and
10
are
calculated according to the equations:
I
F AV
with I
M
defined as peak current,
at DC, and
with I
RMS
defined as RMS current.
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 - Stress test qualification for discrete semiconductors
, and is
suitable for use in automotive applications.
9. Package outline
Fig 11. Duty cycle definition
t
1
t
2
P
t
006aaa812
duty cycle
δ
=
t
1
t
2
)
I
M
δ
×
=
I
RMS
I
F AV
)
=
I
RMS
I
M
δ
×
=
Fig 12. Package outline SOD882
03-04-17
Dimensions in mm
0.55
0.47
0.65
0.62
0.55
0.50
0.46
cathode marking on top side
1.02
0.95
0.30
0.22
0.30
0.22
2
1
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