參數(shù)資料
型號(hào): RB521CS30L
廠商: NXP SEMICONDUCTORS
元件分類: 參考電壓二極管
英文描述: 100 mA low V_F MEGA Schottky barrier rectifier
中文描述: 0.1 A, 30 V, SILICON, SIGNAL DIODE
封裝: 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC PACKAGE-2
文件頁數(shù): 3/13頁
文件大?。?/td> 140K
代理商: RB521CS30L
RB521CS30L
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 24 January 2011
3 of 13
NXP Semiconductors
RB521CS30L
100 mA low V
F
MEGA Schottky barrier rectifier
[1]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[2]
T
j
= 25
°
C prior to surge.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3]
[4]
Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
[1]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
Reflow soldering is the only recommended soldering method.
[2]
[3]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
[5]
Soldering point of cathode tab.
P
tot
total power dissipation
T
amb
25
°
C
[4][3]
-
315
565
150
+150
+150
mW
mW
°
C
°
C
°
C
[4][1]
-
T
j
T
amb
T
stg
junction temperature
ambient temperature
storage temperature
-
65
65
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Limiting values
…continued
Conditions
Min
Max
Unit
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Conditions
in free air
Min
Typ
Max
Unit
[1][2]
[3]
-
-
-
-
395
220
70
K/W
K/W
K/W
[4]
-
R
th(j-sp)
thermal resistance from
junction to solder point
[5]
-
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