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參數(shù)資料
| 型號(hào)： | RA30H1317M-E01 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 135-175MHz 30W 12.5V MOBILE RADIO |
| 中文描述： | 135 - 175MHz時(shí)功率30W 12.5V移動(dòng)通信 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 65K |
| 代理商： | RA30H1317M-E01 |
MITSUBISHI RF POWER MODULE
R A 3 0 H 1 3 1 7 M
RA30H1317M
MITSUBISHI ELECTRIC
3/9
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
TYPICAL PERFORMANCE DATA
OUTPUT POWER, TOTAL EFFICIENCY,
INPUT VSWR VS. FREQUENCY
60
OUTPUT POWER, EFFICIENCY
VS. INPUT POWER
50
OUTPUT POWER, EFFICIENCY
VS. INPUT POWER
50
OUTPUT POWER, EFFICIENCY
VS. INPUT POWER
50
OUTPUT POWER, EFFICIENCY
VS. DRAIN SUPPLY VOLTAGE
60
OUTPUT POWER, EFFICIENCY
VS. GATE SUPPLY VOLTAGE
60
f=135MHz
VDD=12.5V, Pin=50mW
ZG=ZL=50ohm, Tv=+25degC
OUTPUT POWER, EFFICIENCY
VS. GATE SUPPLY VOLTAGE
60
f=155MHz
VDD=12.5V, Pin=50mW
ZG=ZL=50ohm, Tc=+25deg.C
OUTPUT POWER, EFFICIENCY
VS. GATE SUPPLY VOLTAGE
0
10
20
30
40
50
130
140
FREQUENCY f(MHz)
150
160
170
180
O
0
20
40
60
80
100
120
T
E
VDD=12.5V, Pin=50mW
Po=30W(VGG:adj.)
(VGG=5V at Po measure)
ZG=ZL=50ohm, Tc=+25deg.C
Po
@V
Eta
ρ
in
0
10
20
30
40
0
20
INPUT POWER Pin(mW)
40
60
80
100
O
0
20
40
60
80
100
T
E
Po
Eta
freq.=135MHz
VDD=12.5V , VGG=5V
ZG=ZL=50ohm, Tc=+25deg.C
0
10
20
30
40
50
0
2
4
6
8
10
12
DRAIN SUPPLY VOLTAGE (V
DD
)
O
0
20
40
60
80
100
120
T
E
f=135/155/175MHz
VGG=5V, Pin=50mW
ZG=ZL=50ohm, Tc=+25deg.C
Po
Eta
: 135MHz
: 155MHz
- - - - -: 175MHz
0
10
20
30
40
50
2
2.5 3
GATE SUPPLY VOLTAGE (V
GG
)
3.5 4
4.5 5 5.5
6
O
0
20
40
60
80
100
120
T
E
Po
ETa
0
10
20
30
40
50
2
2.5
GATE SUPPLY VOLTAGE (V
GG
)
3
3.5
4
4.5
5
5.5
6
O
0
20
40
60
80
100
120
T
E
Po
Eta
0
10
20
30
40
0
20
INPUT POWER Pin(mW)
40
60
80
100
O
0
20
40
60
80
100
T
E
Po
Eta
freq.=155MHz
VDD=12.5V, VGG=5V
ZG=ZL=50ohm, Tc=+25deg.C
0
10
20
30
40
0
20
INPUT POWER Pin(mW)
40
60
80
100
O
0
20
40
60
80
100
T
E
Po
Eta
freq.=175MHz
VDD=12.5V , VGG=5V
ZG=ZL=50ohm, Tc=+25deg.C
0
10
20
30
40
50
60
2 2.5 3 3.5 4 4.5
5 5.5
6
GATE SUPPLY VOLTAGE (V
GG
)
O
0
20
40
60
80
100
120
T
E
f=175MHz
VDD=12.5V, Pin=50mW
ZG=ZL=50ohm, Tc=+25deg.C
Po
Eta
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50
, unless otherwise specified)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RA30H1317M | 135-175MHz 30W 12.5V MOBILE RADIO |
| RA30H2127M-01 | 210-270MHz 30W 12.5V MOBILE RADIO |
| RA30H2127M-E01 | 210-270MHz 30W 12.5V MOBILE RADIO |
| RA30H2127M | 210-270MHz 30W 12.5V MOBILE RADIO |
| RA30H3340M | MITSUBISHI RF MOSFET MODULE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RA30H1721M | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:175-215MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO |
| RA30H1721M_10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:175-215MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO |
| RA30H1721M_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 175-215MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO |
| RA30H1721M-101 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 175-215MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO |
| RA30H2127M | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:210-270MHz 30W 12.5V MOBILE RADIO |
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