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參數(shù)資料
| 型號： | RA30H2127M |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | 210-270MHz 30W 12.5V MOBILE RADIO |
| 中文描述： | 210 - 270MHz功率30W 12.5V移動通信 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 61K |
| 代理商： | RA30H2127M |
MITSUBISHI RF MOSFET MODULE
R A 3 0 H 2 1 2 7 M
210-270MHz
30W
12.5V MOBILE RADIO
RA30H2127M
MITSUBISHI ELECTRIC
1/9
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
The RA30H2127M is a 30-watt RF MOSFET Amplifier Module
for 12.5-volt mobile radios that operate in the 210- to 270-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 4V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4.5V (typical) and 5V (maximum). At V
GG
=5V, the
typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
Enhancement-Mode MOSFET Transistors
(I
DD
0 @ V
DD
=12.5V, V
GG
=0V)
P
out
>30W,
η
T
>40% @ V
DD
=12.5V, V
GG
=5V, P
in
=50mW
Broadband Frequency Range: 210-270MHz
Low-Power Control Current I
GG
=1mA (typ) at V
GG
=5V
Module Size: 66 x 21 x 9.88 mm
Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA30H2127M-E01
RA30H2127M-01
(Japan - packed without desiccator)
Antistatic tray,
10 modules/tray
BLOCK
DIAGRAM
1 RF Input (P
in
)
2 Gate Voltage (V
GG
), Power Control
3 Drain Voltage (V
DD
), Battery
4 RF Output (P
out
)
5 RF Ground (Case)
3
2
4
1
5
相關(guān)PDF資料 |
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|---|---|
| RA30H3340M | MITSUBISHI RF MOSFET MODULE |
| RA30H3340M-01 | MITSUBISHI RF MOSFET MODULE |
| RA30H3340M-E01 | MITSUBISHI RF MOSFET MODULE |
| RA30H4047M | 400-470MHz 30W 12.5V MOBILE RADIO |
| RA30H4047M-01 | 400-470MHz 30W 12.5V MOBILE RADIO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RA30H2127M_06 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 210-270MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO |
| RA30H2127M_10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:210-270MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO |
| RA30H2127M-01 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:210-270MHz 30W 12.5V MOBILE RADIO |
| RA30H2127M-101 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:210-270MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO |
| RA30H2127M-E01 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:210-270MHz 30W 12.5V MOBILE RADIO |
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