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參數(shù)資料
| 型號(hào)： | RA08N1317M |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | Anti-Static Storage Bags; External Height:6"; External Width:4"; Features:Zipper closure, amine-free, noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA |
| 中文描述： | 135 - 175MHz時(shí)8瓦特9.6V的便攜式無(wú)線 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 62K |
| 代理商： | RA08N1317M |
MITSUBISHI RF MOSFET MODULE
R A 0 8 N1 3 1 7 M
135-175MHz
8W
9.6V PORTABLE RADIO
RA08N1317M
MITSUBISHI ELECTRIC
1/9
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
The RA08N1317M is a 8-watt RF MOSFET Amplifier Module
for 9.6-volt portable radios that operate in the 135- to 175-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 2.5V (minimum), output power and drain
current increases substantially. The nominal output power
becomes available at 3V (typical) and 3.5V (maximum). At
V
GG
=3.5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
Enhancement-Mode MOSFET Transistors
(I
DD
0 @ V
DD
=9.6V, V
GG
=0V)
P
out
>8W @ V
DD
=9.6V, V
GG
=3.5V, P
in
=20mW
η
T
>50% @ P
out
=8W (V
GG
control), V
DD
=9.6V, P
in
=20mW
Broadband Frequency Range: 135-175MHz
Low-Power Control Current I
GG
=1mA (typ) at V
GG
=3.5V
Module Size: 30 x 10 x 5.4 mm
Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA08N1317M-E01
RA08N1317M-01
(Japan - packed without desiccator)
Antistatic tray,
25 modules/tray
BLOCK
DIAGRAM
1 RF Input (P
in
)
2 Gate Voltage (V
GG
), Power Control
3 Drain Voltage (V
DD
), Battery
4 RF Output (P
out
)
5 RF Ground (Case)
3
2
4
1
5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RA08N1317M-01 | Anti-Static Storage Bags; External Height:8"; External Width:5"; Features:Zipper closure, Amine-free, noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA |
| RA08N1317M-E01 | Anti-Static Storage Bags; External Height:10"; External Width:6"; Features:Zipper closure, Amine-free, noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA |
| RA13H1317M-E01 | GIGATRUE 550 CAT6 PATCH 10 FT, NON BOOT, PURPLE |
| RA13H1317M | 135-175MHz 13W 12.5V MOBILE RADIO |
| RA13H1317M-01 | 135-175MHz 13W 12.5V MOBILE RADIO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RA08N1317M_06 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO |
| RA08N1317M_10 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO |
| RA08N1317M-01 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:135-175MHz 8W 9.6V PORTABLE RADIO |
| RA08N1317M-101 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO |
| RA08N1317M-E01 | 制造商:MITSUBISHI 制造商全稱(chēng):Mitsubishi Electric Semiconductor 功能描述:135-175MHz 8W 9.6V PORTABLE RADIO |
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