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參數(shù)資料
| 型號(hào)： | RA13H1317M-E01 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | GIGATRUE 550 CAT6 PATCH 10 FT, NON BOOT, PURPLE |
| 中文描述： | 135 - 175MHz時(shí)13W 12.5V移動(dòng)通信 |
| 文件頁(yè)數(shù)： | 1/9頁(yè) |
| 文件大?。?/td> | 67K |
| 代理商： | RA13H1317M-E01 |
MITSUBISHI RF MOSFET MODULE
R A 1 3 H 1 3 1 7 M
135-175MHz
13W
12.5V MOBILE RADIO
RA13H1317M
MITSUBISHI ELECTRIC
1/9
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
DESCRIPTION
The RA13H1317M is a 13-watt RF MOSFET Amplifier Module
for 12.5-volt mobile radios that operate in the 135- to 175-MHz
range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. Without the gate
voltage (V
GG
=0V), only a small leakage current flows into the drain
and the RF input signal attenuates up to 60 dB. The output power
and drain current increase as the gate voltage increases. With a
gate voltage around 4V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4.5V (typical) and 5V (maximum). At V
GG
=5V, the
typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may
also be used for linear modulation by setting the drain quiescent
current with the gate voltage and controlling the output power with
the input power.
FEATURES
Enhancement-Mode MOSFET Transistors
(I
DD
0 @ V
DD
=12.5V, V
GG
=0V)
P
out
>13W,
η
T
>40% @ V
DD
=12.5V, V
GG
=5V, P
in
=50mW
Broadband Frequency Range: 135-175 MHz
Low-Power Control Current I
GG
=1mA (typ) at V
GG
=5V
Module Size: 66 x 21 x 9.88 mm
Linear operation is possible by setting the quiescent drain current
with the gate voltage and controlling the output power with the
input power
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
RA13H1317M-E01
RA13H1317M-01
(Japan - Packed without desiccator)
Antistatic tray,
10 modules/tray
BLOCK
DIAGRAM
1 RF Input (P
in
)
2 Gate Voltage (V
GG
), Power Control
3 Drain Voltage (V
DD
), Battery
4 RF Output (P
out
)
5 RF Ground (Case)
3
2
4
1
5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RA13H1317M | 135-175MHz 13W 12.5V MOBILE RADIO |
| RA13H1317M-01 | 135-175MHz 13W 12.5V MOBILE RADIO |
| RA13H4047M | 30V N-Channel PowerTrench MOSFET |
| RA13H4047M-01 | 30V N-Channel PowerTrench MOSFET |
| RA13H4047M-E01 | 30V N-Channel PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RA13H3340M | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO |
| RA13H3340M_06 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO |
| RA13H3340M_10 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO |
| RA13H3340M_11 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance ,330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO |
| RA13H3340M-01 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:330-400MHz 13W 12.5V MOBILE RADIO |
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