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參數(shù)資料
| 型號： | RA08N1317M-01 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | Anti-Static Storage Bags; External Height:8"; External Width:5"; Features:Zipper closure, Amine-free, noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA |
| 中文描述： | 135 - 175MHz時8瓦特9.6V的便攜式無線 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 62K |
| 代理商： | RA08N1317M-01 |
MITSUBISHI RF POWER MODULE
R A 0 8 N 1 3 1 7 M
RA08N1317M
MITSUBISHI ELECTRIC
2/9
23 Dec 2002
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MAXIMUM RATINGS
(T
case
=+25°C, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
RATING
UNIT
V
DD
Drain Voltage
V
GG
<3.5V
16
V
V
GG
Gate Voltage
V
DD
<9.6V, P
in
=0mW
4
V
P
in
Input Power
30
mW
P
out
Output Power
f=135-175MHz,
Z
G
=Z
L
=50
10
W
T
case(OP)
Operation Case Temperature Range
-30 to +90
°C
T
stg
Storage Temperature Range
The above parameters are independently guaranteed.
-40 to +110
°C
ELECTRICAL CHARACTERISTICS
(T
case
=+25°C, Z
G
=Z
L
=50
, unless otherwise specified)
SYMBOL PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
f
Frequency Range
135
175
MHz
P
out
Output Power
V
DD
=9.6V,V
GG
=3.5V, P
in
=20mW
8
W
η
T
Total Efficiency
2
nd
Harmonic
50
%
2f
o
-25
dBc
ρ
in
Input VSWR
4:1
—
I
GG
Gate Current
P
out
=8W (V
GG
control),
V
DD
=9.6V,
P
in
=20mW
1
mA
—
Stability
V
DD
=4.8-15V, P
in
=10-30mW, P
out
<8W (V
GG
control),
Load VSWR=4:1
No parasitic oscillation
—
—
Load VSWR Tolerance
V
DD
=13.2V, P
in
=20mW, P
out
=8W (V
GG
control),
Load VSWR=20:1
No degradation or
destroy
—
All parameters, conditions, ratings, and limits are subject to change without notice.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| RA08N1317M-E01 | Anti-Static Storage Bags; External Height:10"; External Width:6"; Features:Zipper closure, Amine-free, noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA |
| RA13H1317M-E01 | GIGATRUE 550 CAT6 PATCH 10 FT, NON BOOT, PURPLE |
| RA13H1317M | 135-175MHz 13W 12.5V MOBILE RADIO |
| RA13H1317M-01 | 135-175MHz 13W 12.5V MOBILE RADIO |
| RA13H4047M | 30V N-Channel PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| RA08N1317M-101 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:RoHS Compliance , 135-175MHz 8W 9.6V, 2 Stage Amp. For PORTABLE RADIO |
| RA08N1317M-E01 | 制造商:MITSUBISHI 制造商全稱:Mitsubishi Electric Semiconductor 功能描述:135-175MHz 8W 9.6V PORTABLE RADIO |
| RA-08-R | 制造商:DBLECTRO 制造商全稱:DB Lectro Inc 功能描述:RIGHT ANGLE TYPE DIP SWITCH |
| RA-08-R-T | 制造商:DBLECTRO 制造商全稱:DB Lectro Inc 功能描述:RIGHT ANGLE TYPE DIP SWITCH |
| RA-09 | 制造商:DBLECTRO 制造商全稱:DB Lectro Inc 功能描述:RIGHT ANGLE TYPE DIP SWITCH |
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