參數(shù)資料
型號(hào): RA07M3340M-01
廠商: Mitsubishi Electric Corporation
英文描述: MITSUBISHI RF MOSFET MODULE
中文描述: 三菱射頻MOSFET模塊
文件頁數(shù): 3/9頁
文件大?。?/td> 67K
代理商: RA07M3340M-01
MITSUBISHI RF POWER MODULE
R A 0 7 M 3 3 4 0 M
RA07M3340M
MITSUBISHI ELECTRIC
3/9
25 April 2003
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
OUTPUT POWER, TOTAL EFFICIENCY,
and INPUT VSWR versus FREQUENCY
10
2
nd
, 3
rd
HARMONICS versus FREQUENCY
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
f=330MHz,
V
DD
=7.2V,
V
GG
=3.5V
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
f=350MHz,
V
DD
=7.2V,
V
GG
=3.5V
Gp
0
1
2
3
4
5
6
7
8
9
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
O
o
(
I
ρ
i
0
10
20
30
40
50
60
70
80
90
100
T
η
T
(
V
DD
=7.2V
P
in
=50mW
P
out
@V
GG
=3.5V
h
T
@P
out
=6.5W
r
in
@P
out
=6.5W
0
10
20
30
40
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
O
o
(
P
0
2
4
6
8
10
D
I
D
(
P
out
I
DD
Gp
0
10
20
30
40
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
O
o
(
P
0
2
4
6
8
10
D
I
D
(
P
out
I
DD
-70
-60
-50
-40
-30
-20
320 330 340 350 360 370 380 390 400 410
FREQUENCY f(MHz)
H
V
DD
=7.2V
P
in
=50mW
2
nd
@P
out
=6.5W
3
rd
@P
out
=6.5W
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
f=380MHz,
V
DD
=7.2V,
V
GG
=3.5V
Gp
OUTPUT POWER, POWER GAIN and
DRAIN CURRENT versus INPUT POWER
50
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
16
f=330MHz,
V
GG
=3.5V,
P
in
=50mW
OUTPUT POWER and DRAIN CURRENT
versus DRAIN VOLTAGE
16
f=350MHz,
V
GG
=3.5V,
P
in
=50mW
0
2
4
6
8
10
12
14
2
3
4
5
6
7
8
9
10
DRAIN VOLTAGE V
DD
(V)
O
o
(
0
2
4
6
8
D
D
(
P
out
I
DD
0
10
20
30
40
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
O
o
(
P
0
2
4
6
8
10
D
I
D
(
P
out
I
DD
0
2
4
6
8
10
12
14
2
3
4
5
6
7
8
9
10
DRAIN VOLTAGE V
DD
(V)
O
o
(
0
2
4
6
8
D
D
(
P
out
I
DD
0
10
20
30
40
-10
-5
0
5
10
15
20
INPUT POWER P
in
(dBm)
O
o
(
P
0
2
4
6
8
10
D
I
D
(
f=400MHz,
V
DD
=7.2V,
V
GG
=3.5V
P
out
Gp
I
DD
TYPICAL PERFORMANCE
(T
case
=+25°C, Z
G
=Z
L
=50
, unless otherwise specified)
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