參數(shù)資料
型號: R5F562N8ADFP#V0
廠商: Renesas Electronics America
文件頁數(shù): 103/148頁
文件大小: 0K
描述: MCU 32BIT FLASH 512KROM 100LQFP
產(chǎn)品培訓(xùn)模塊: RX Compare Match Timer
RX DMAC
標(biāo)準(zhǔn)包裝: 1
系列: RX600
核心處理器: RX
芯體尺寸: 32-位
速度: 100MHz
連通性: EBI/EMI,I²C,SCI,SPI,USB
外圍設(shè)備: DMA,LVD,POR,PWM,WDT
輸入/輸出數(shù): 72
程序存儲器容量: 512KB(512K x 8)
程序存儲器類型: 閃存
RAM 容量: 96K x 8
電壓 - 電源 (Vcc/Vdd): 2.7 V ~ 3.6 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 8x10/12b,D/A 1x10b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 85°C
封裝/外殼: 100-LQFP
包裝: 托盤
PIC18F6520/8520/6620/8620/6720/8720
DS39609B-page 56
2004 Microchip Technology Inc.
4.10
Access Bank
The Access Bank is an architectural enhancement,
which is very useful for C compiler code optimization.
The techniques used by the C compiler may also be
useful for programs written in assembly.
This data memory region can be used for:
Intermediate computational values
Local variables of subroutines
Faster context saving/switching of variables
Common variables
Faster evaluation/control of SFRs (no banking)
The Access Bank is comprised of the upper 160 bytes
in Bank 15 (SFRs) and the lower 96 bytes in Bank 0.
These two sections will be referred to as Access RAM
High and Access RAM Low, respectively. Figure 4-7
indicates the Access RAM areas.
A bit in the instruction word specifies if the operation is
to occur in the bank specified by the BSR register or in
the Access Bank. This bit is denoted by the ‘a(chǎn)’ bit (for
access bit).
When forced in the Access Bank (a = 0), the last
address in Access RAM Low is followed by the first
address in Access RAM High. Access RAM High maps
the Special Function Registers, so that these registers
can be accessed without any software overhead. This is
useful for testing status flags and modifying control bits.
4.11
Bank Select Register (BSR)
The need for a large general purpose memory space
dictates a RAM banking scheme. The data memory is
partitioned into sixteen banks. When using direct
addressing, the BSR should be configured for the
desired bank.
BSR<3:0> holds the upper 4 bits of the 12-bit RAM
address. The BSR<7:4> bits will always read ‘0’s and
writes will have no effect.
A MOVLB instruction has been provided in the
instruction set to assist in selecting banks.
If the currently selected bank is not implemented, any
read will return all ‘0’s and all writes are ignored. The
Status register bits will be set/cleared as appropriate for
the instruction performed.
Each Bank extends up to FFh (256 bytes). All data
memory is implemented as static RAM.
A MOVFF instruction ignores the BSR, since the 12-bit
addresses are embedded into the instruction word.
Registers” provides a description of indirect address-
ing, which allows linear addressing of the entire RAM
space.
FIGURE 4-8:
DIRECT ADDRESSING
Note 1:
For register file map detail, see Table 4-2.
2:
The access bit of the instruction can be used to force an override of the selected bank (BSR<3:0>) to the
registers of the Access Bank.
3:
The MOVFF instruction embeds the entire 12-bit address in the instruction.
Data
Memory(1)
Direct Addressing
Bank Select(2)
Location Select(3)
BSR<3:0>
7
0
From Opcode(3)
00h
01h
0Eh
0Fh
Bank 0
Bank 1
Bank 14
Bank 15
1FFh
100h
0FFh
000h
EFFh
E00h
FFFh
F00h
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R5F562N8BDBG#U0 功能描述:MCU 32BIT FLASH 512K ROM 176BGA RoHS:是 類別:集成電路 (IC) >> 嵌入式 - 微控制器, 系列:RX600 標(biāo)準(zhǔn)包裝:1 系列:87C 核心處理器:MCS 51 芯體尺寸:8-位 速度:16MHz 連通性:SIO 外圍設(shè)備:- 輸入/輸出數(shù):32 程序存儲器容量:8KB(8K x 8) 程序存儲器類型:OTP EEPROM 大小:- RAM 容量:256 x 8 電壓 - 電源 (Vcc/Vdd):4 V ~ 6 V 數(shù)據(jù)轉(zhuǎn)換器:- 振蕩器型:外部 工作溫度:0°C ~ 70°C 封裝/外殼:44-DIP 包裝:管件 其它名稱:864285
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