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| 型號(hào)： | R1LV0416CBG-5SI |
| 元件分類(lèi)： | SRAM |
| 英文描述： | 256K X 16 STANDARD SRAM, 55 ns, PBGA48 |
| 封裝： | 0.75 MM PITCH, CSP-48 |
| 文件頁(yè)數(shù)： | 13/16頁(yè) |
| 文件大?。?/td> | 128K |
| 代理商： | R1LV0416CBG-5SI |
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R1LV0416CBG-I Series
Rev.1.00, Jun.17.2005, page 6 of 14
AC Characteristics
(Ta =
40 to +85°C, V
CC = 2.2 V to 3.6 V, unless otherwise noted.)
Test Conditions
Input pulse levels: V
IL = 0.4 V, VIH = 2.2 V (VCC = 2.2 V to 2.7 V)
: VIL = 0.4 V, VIH = 2.4 V (VCC = 2.7 V to 3.6 V)
Input rise and fall time: 5 ns
Input/output timing reference levels: 1.1 V (V
CC = 2.2 V to 2.7 V)
: 1.4 V (VCC = 2.7 V to 3.6 V)
Output load: See figures (Including scope and jig)
Dout
30pF
R1
V
TM
V
TM = 2.3 V
R2
R1 = 3070
R2 = 3150
50pF
Dout
RL=500
1.4 V
Output load (A)
(V
CC = 2.2 V to 2.7 V)
Output load (B)
(V
CC = 2.7 V to 3.6 V)
Read Cycle
R1LV0416CBG-I
-5SI
-7LI
Parameter
Symbol
Min
Max
Min
Max
Unit
Notes
Read cycle time
tRC
55
70
ns
Address access time
tAA
55
70
ns
Chip select access time
tACS1
55
70
ns
tACS2
55
70
ns
Output enable to output valid
tOE
35
40
ns
Output hold from address change
tOH
10
10
ns
LB#, UB# access time
tBA
55
70
ns
Chip select to output in low-Z
tCLZ1
10
10
ns
2, 3
tCLZ2
10
10
ns
2, 3
LB#, UB# disable to low-Z
tBLZ
5
5
ns
2, 3
Output enable to output in low-Z
tOLZ
5
5
ns
2, 3
Chip deselect to output in high-Z
tCHZ1
0
20
0
25
ns
1, 2, 3
tCHZ2
0
20
0
25
ns
1, 2, 3
LB#, UB# disable to high-Z
tBHZ
0
20
0
25
ns
1, 2, 3
Output disable to output in high-Z
tOHZ
0
20
0
25
ns
1, 2, 3
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| R1LV0416CBG-7LI | 制造商:Renesas Electronics Corporation 功能描述: |
| R1LV0416CBG-7LI(#B0) | 制造商:Renesas Electronics Corporation 功能描述: |
| R1LV0416CBG-I | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Wide Temperature Range Version 4M SRAM (256-kword 】 16-bit) |
| R1LV0416C-I | 制造商:RENESAS 制造商全稱(chēng):Renesas Technology Corp 功能描述:Wide Temperature Range Version 4M SRAM (256-kword 】 16-bit) |
| R1LV0416CSB-5SI | 制造商:Renesas Electronics Corporation 功能描述:Wide Temperature Range Version 4M SRAM 制造商:Renesas Electronics 功能描述:256k~16 55ns 2.5V / 3V 44TSOP Tray |
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