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參數(shù)資料
| 型號： | QSE213 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 光敏三極管 |
| 英文描述： | PLASTIC SILICON INFRARED PHOTOTRANSISTOR |
| 中文描述： | PHOTO TRANSISTOR DETECTOR |
| 封裝： | PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 314K |
| 代理商： | QSE213 |
7/23/02
Page 2 of 4
2002 Fairchild Semiconductor Corporation
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSE213 QSE214
NOTES:
1. Derate power dissipation linearly 1.33 mW/
°
C above 25
°
C.
2. RMA
fl
ux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16" (1.6 mm) minimum from housing.
5.
λ
= 950 nm GaAs.
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25
°
C unless otherwise speci
fi
ed)
Parameter
Symbol
Rating
Unit
Operating Temperature
T
OPR
T
STG
-40 to +100
°
C
Storage Temperature
-40 to +100
°
C
Soldering Temperature (Iron)
(2,3,4)
T
SOL-I
240 for 5 sec
°
C
Soldering Temperature (Flow)
(2,3)
T
SOL-F
260 for 10 sec
°
C
Collector-Emitter Voltage
V
CE
30
V
Emitter-Collector Voltage
V
EC
5
V
Power Dissipation
(1)
P
D
100
mW
ELECTRICAL / OPTICAL CHARACTERISTICS
(T
A
=25
°
C unless otherwise speci
fi
ed)
Parameter
Test Conditions
Symbol
Min
Typ
Max
Units
Peak Sensitivity
λ
PS
Θ
I
D
—
880
—
nM
Reception Angle
—
±25
—
Deg.
Collector Emitter Dark Current
V
CE
= 1 mA
= 10 V, E
e
= 0
—
—
100
nA
Collector Emitter Breakdown
I
C
I
E
BV
CEO
30
—
—
V
Emitter Collector Breakdown
= 100 μA
BV
ECO
5
—
—
V
On-State Collector Current
E
e
= 0.5 mW/cm
2
, V
CE
= 5 V
(QSE213)
I
C(ON)
0.2
—
1.50
mA
(QSE214)
1.00
—
—
Saturation Voltage
V
CE
= 0.5 mW/cm
= 5 V
(5)
E
e
= 0.1 mA
2
,
I
C
(5)
V
CE(SAT)
—
—
0.4
V
Rise Time
V
CC
= 5V, R
L
= 100
, I
C
= 1mA
t
r
—
8
—
μs
Fall Time
t
f
—
8
—
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| QSE214 | PLASTIC SILICON INFRARED PHOTOTRANSISTOR |
| QSE243 | LOW LIGHT REJECTION PLASTIC SILICON INFRARED PHOTOTRANSISTOR |
| QSE773 | PLASTIC SILICON PIN PHOTODIODE |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QSE213_05 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Plastic Silicon Infrared Phototransistor |
| QSE213C | 功能描述:光電晶體管 OPTO_LIGHTING RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSE214 | 功能描述:紅外發(fā)射源 PHOTOTRANSISTOR SIDELOOKER TYPE A RoHS:否 制造商:Fairchild Semiconductor 波長:880 nm 射束角:+/- 25 輻射強度: 最大工作溫度:+ 100 C 最小工作溫度:- 40 C 封裝 / 箱體:Side Looker 封裝:Bulk |
| QSE214C | 功能描述:光電晶體管 OPTO_LIGHTING RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSE243 | 功能描述:光電晶體管 Phototransistor Lo Light Reject RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
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