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參數(shù)資料
| 型號(hào)： | QSD723_0163 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 光敏三極管 |
| 英文描述： | PHOTO TRANSISTOR DETECTOR |
| 封裝： | LEAD FREE, PLASTIC, TO-18, 2 PIN |
| 文件頁數(shù)： | 5/6頁 |
| 文件大?。?/td> | 190K |
| 代理商： | QSD723_0163 |
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QSD723
Plastic Silicon Infrared Phototransistor
General description
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Features
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Contents
General description
Features
Testing conditions
Product status/pricing/packaging
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Qualification Support
The QSD722/723/724 is a silicon phototransistor encapsulated in an
infrared transparent, black TO-18 package.
NPN silicon phototransistor
Package type: Plastic TP-18
Matched emitter: QED523
Narrow reception angle, 40
°
Daylight filter
Package material and color: black epoxy
High sensitivity
Datasheet
Download this
datasheet
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Print version
Testing conditions
On-State Collector Current @ Ee = 0.5 mW/cm
2 (AlGaAs), V
CE = 5 V
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Product Folder - Fairchild P/N QSD723 - Plastic Silicon Infrared Phototransistor
18-Aug-2007
mhtml:file://C:\TEMP\QSD723_0163.mht
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| QSE213C | Plastic Silicon Infrared Phototransistor |
| QSE214C | Plastic Silicon Infrared Phototransistor |
| QSFPO-013.0-01 | INTERCONNECTION DEVICE |
| QSFPO-073.0-01 | INTERCONNECTION DEVICE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| QSD724 | 功能描述:光電晶體管 3.5mA PHOTO TRANS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSD724_Q | 功能描述:光電晶體管 3.5mA PHOTO TRANS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSD733 | 功能描述:光電晶體管 PHOTO SENS. TO-18 RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSD733_Q | 功能描述:光電晶體管 PHOTO SENS. TO-18 RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
| QSD733C | 功能描述:光電晶體管 QSD733 CLEAR RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1 |
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