參數(shù)資料
型號: QSD723_0163
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 光敏三極管
英文描述: PHOTO TRANSISTOR DETECTOR
封裝: LEAD FREE, PLASTIC, TO-18, 2 PIN
文件頁數(shù): 2/6頁
文件大?。?/td> 190K
代理商: QSD723_0163
www.fairchildsemi.com
2 OF 4
7/18/01
DS300363
1. Derate power dissipation linearly 1.33 mW/°C above 25°C.
2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16” (1.6mm) minimum from housing.
5.
! = 880 nm, AlGaAs.
Parameter
Symbol
Rating
Unit
Operating Temperature
TOPR
-40 to +100
°C
Storage Temperature
TSTG
-40 to +100
°C
Soldering Temperature (Iron)(2,3,4)
TSOL-I
240 for 5 sec
°C
Soldering Temperature (Flow)(2,3)
TSOL-F
260 for 10 sec
°C
Collector-Emitter Voltage
VCE
30
V
Emitter-Collector Voltage
VEC
5V
Power Dissipation(1)
PD
100
mW
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
TEST CONDITIONS
SYMBOL
MIN
TYP
MAX
UNITS
Peak Sensitivity Wavelength
!PS
880
nm
Reception Angle
"
±20
Deg.
Collector-Emitter Dark Current
VCE = 10 V, Ee = 0
ICEO
100
nA
Collector-Emitter Breakdown
IC = 1 mA
BVCEO
30
V
Emitter-Collector Breakdown
IE = 100 A
BVECO
5—
V
On-State Collector Current(5)
QSD722
0.6
3.8
QSD723
Ee = 0.5 mW/cm2, VCE = 5 V
IC(ON)
2.5
10.0
mA
QSD724
3.5
Saturation Voltage(5)
Ee = 0.5 mW/cm2, IC = 0.6 mA
VCE(sat)
0.4
V
Rise Time
VCC = 5 V, RL = 100 , IC = 0.2 mA
tr
—8
s
Fall Time
tf
—8
ELECTRICAL / OPTICAL CHARACTERISTICS (TA =25°C)
PLASTIC SILICON
INFRARED PHOTOTRANSISTOR
QSD722
QSD723
QSD724
相關(guān)PDF資料
PDF描述
QSE123 PHOTO TRANSISTOR DETECTOR
QSE213C Plastic Silicon Infrared Phototransistor
QSE214C Plastic Silicon Infrared Phototransistor
QSFPO-013.0-01 INTERCONNECTION DEVICE
QSFPO-073.0-01 INTERCONNECTION DEVICE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
QSD724 功能描述:光電晶體管 3.5mA PHOTO TRANS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
QSD724_Q 功能描述:光電晶體管 3.5mA PHOTO TRANS RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
QSD733 功能描述:光電晶體管 PHOTO SENS. TO-18 RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
QSD733_Q 功能描述:光電晶體管 PHOTO SENS. TO-18 RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1
QSD733C 功能描述:光電晶體管 QSD733 CLEAR RoHS:否 制造商:OSRAM Opto Semiconductors 最大功率耗散:165 mW 最大暗電流:200 nA 封裝 / 箱體:T-1