參數(shù)資料
型號： QS6U22
廠商： Rohm CO.,LTD.
英文描述： Small switching (−20V, −1.5A)
文件頁數(shù)： 2/4頁
文件大?。?/td> 60K
代理商： QS6U22
QS6U22
Transistors
!
Electrical characteristics
(Ta=25
°
C)
MOSFET
2/3
Pulsed
!
Body diode
(Source-drain)
MOSFET
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Parameter
Symbol
I
GSS
V
(BR) DSS
I
DSS
V
GS (th)
Y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
Q
g
Q
gs
Q
gd
Min.
20
0.7
1.0
±
10
1
2.0
215
235
430
μ
A
V
μ
A
V
m
V
GS
=±
12V, V
DS
=
0V
I
D
=
1mA, V
GS
=
0V
V
DS
=
20V, V
GS
=
0V
V
DS
=
10V, I
D
=
1mA
I
D
=
1.5A, V
GS
=
4.5V
I
D
=
1.5A, V
GS
=
4V
I
D
=
0.75A, V
GS
=
2.5V
V
DS
=
10V, I
D
=
0.75A
V
DS
=
10V
V
GS
=
0V
f
=
1MHz
I
D
=
0.75A
Typ.
Max.
Unit
Conditions
155
170
310
270
40
35
10
12
45
20
3.0
0.8
0.85
R
DS (on)
m
m
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
DD
15
V
V
GS
=
4.5V
R
L
=
20
R
G
=
10
V
DD
15V
V
GS
=
4.5V
R
=
10
/ R
G
=10
I
D
=
1.5A
V
SD
1.2
V
I
S
=
0.75A, V
GS
=
0V
Forward voltage
Di
V
F
I
R
0.49
200
V
μ
A
I
F
=
0.7A
V
R
=
20V
Forward voltage drop
Reverse leakage
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
!
Electrical characteristic curves
<MOSFET>
1
1.5
2
2.5
3
3.5
4
4.5
5
GATE-SOURCE VOLTAGE :
V
GS
(V)
0.001
0.01
0.1
1
10
D
I
D
Fig.1
Typical Transfer Characteristics
V
DS
10V
Pulsed
Ta
=
25
°
C
Ta
=
25
°
C
Ta
=
75
°
C
Ta
=
125
°
C
0.1
1
10
100
1000
10000
DRAIN CURRENT :
I
D
(A)
S
O
R
D
)
Fig.2
Static Drain-Source On-State
Resistance vs. Drain Current (
Ι
)
V
GS
=
10V
Pulsed
Ta
=
25
°
C
Ta
=
25
°
C
Ta
=
75
°
C
Ta
=
125
°
C
0.1
1
10
Fig.3
Static Drain-Source On-State
Resistance vs. Drain Current (
ΙΙ
)
DRAIN CURRENT :
I
D
(A)
S
O
R
D
)
100
1000
10000
V
GS
4.5V
Pulsed
Ta
=
25
°
C
Ta
=
25
°
C
Ta
=
75
°
C
Ta
=
125
°
C
0.1
1
10
100
1000
10000
DRAIN CURRENT :
I
D
(A)
S
O
R
D
)
Fig.4
Static Drain-Source On-State
Resistance vs. Drain Current (
ΙΙΙ
)
V
GS
=
4V
Pulsed
Ta
=
25
°
C
Ta
=
25
°
C
Ta
=
75
°
C
Ta
=
125
°
C
0
2
4
6
8
10
12
14
16
GATE-SOURCE VOLTAGE :
V
GS
(V)
200
300
400
500
600
700
800
900
1000
1100
1200
S
O
R
D
)
Fig.5 Static Drain-Source On-State
Resistance vs. Gate-Source
Voltage
Ta
=
25
°
C
Pulsed
I
D
=
1.2A
I
D
=
0.6A
0.1
1
10
DRAIN CURRENT :
I
D
(A)
100
1000
10000
S
O
R
D
)
Ta
=
25
°
C
Pulsed
Fig.6
Static Drain-Source On-State
Resistance vs. Drain Current ( )
V
GS
=
10V
V
GS
=
4.5V
V
GS
=
4.0V
相關PDF資料
PDF描述
QS6U24 Small switching (&#8722;30V, &#8722;1A)
QS7201-10JRI x9 Asynchronous FIFO
QS7201-10P x9 Asynchronous FIFO
QS7201-10PI x9 Asynchronous FIFO
QS7201-10Q x9 Asynchronous FIFO
相關代理商/技術參數(shù)
參數(shù)描述
QS6U22_1 制造商:ROHM 制造商全稱:Rohm 功能描述:2.5V Drive Pch+SBD MOS FET
QS6U22TR 功能描述:MOSFET P-CH 20V 1.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
QS6U24 制造商:ROHM 制造商全稱:Rohm 功能描述:Small switching (-30V, -1A)
QS6U24_1 制造商:ROHM 制造商全稱:Rohm 功能描述:4V Drive Pch+SBD MOS FET
QS6U24TR 功能描述:MOSFET P-CH 30V 1A TSMT6 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*