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參數(shù)資料
| 型號： | QS6U24 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Small switching (−30V, −1A) |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 43K |
| 代理商： | QS6U24 |
QS6U24
Transistor
Small switching (
30V,
1A)
1/3
QS6U24
!
Features
1) The QS6U24 conbines Pch Treueh MOSFET with a
Schottky barrier diode in a single TSMT6 package.
2) Pch Treueh MOSFET have a low on-state resisternce
with a fast switching.
3) Pch Treueh MOSFET is neucted a low voltage drive
(4V).
4) The independently connected Schottky barrier diode
have a low forward voltage.
!
Applications
load switch, DC/DC conversion
!
Structure
Silicon P-channel MOS FET
Schottky Barrier DIODE
!
Packaging specifications
!
External dimensions
(Units : mm)
0
0
2
2.8
1.6
0
1pin mark
(
(
(
(
(
(
Each lead has same dimensions
Abbreviated symbol : U24
TSMT6
(1)Anode
(2)Source
(3)Gate
(4)Drain
(5)N/C
(6)Cathode
QS6U24
TR
3000
Type
Package
Code
Taping
Basic ordering unit (pieces)
!
Equivalent circuit
2
1
(1)
(2)
(5)
(3)
(6)
(4)
(1)Anode
(2)Source
(3)Gate
(4)Drain
(5)N/C
(6)Cathode
A protection diode has been buitt in between the gate and
the source to protect against static electricity when the product
is in use. Use the protection circuit when rated voltages are exceeded.
1 ESD protection diode
2 Body diode
!
Absolute maximum ratings
(Ta=25
°
C)
<
MOSFET
>
1
1
Parameter
V
V
A
A
A
A
°
C
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
Tch
Symbol
30
±
20
±
1.0
±
2.0
0.3
1.2
150
Limits
Unit
Parameter
Symbol
V
RM
V
R
I
F
I
FSM
Tj
Limits
25
20
0.7
3.0
125
Unit
V
V
A
A
°
C
2
3
Parameter
Symbol
P
D
Tstg
Limits
1.0
40~
+
125
Unit
°
C
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Channel temperature
<
Di
>
Continuous
Pulsed
Continuous
Pulsed
W/Total
1 Pw
≤
10
μ
s, Duty cycle
≤
1%
2 60Hz
1cyc.
3 Total mounted on a ceramic board
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
<
MOSFET AND Di
>
Total power dissipatino
Range of strage temperature
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| QS6U24_1 | 制造商:ROHM 制造商全稱:Rohm 功能描述:4V Drive Pch+SBD MOS FET |
| QS6U24TR | 功能描述:MOSFET P-CH 30V 1A TSMT6 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| QS6Z5 | 制造商:ROHM 制造商全稱:Rohm 功能描述:Complex Midium Power Transistors (50V/1A) |
| QS7024A-20J | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| QS7024A-20TF | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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