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參數(shù)資料
| 型號(hào)： | Q62702-F1611 |
| 廠商： | SIEMENS AG |
| 英文描述： | NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.) |
| 中文描述： | NPN硅射頻晶體管（低噪聲放大器了從0.5毫安在集電極電流為2GHz至20毫安。） |
| 文件頁數(shù)： | 6/11頁 |
| 文件大?。?/td> | 101K |
| 代理商： | Q62702-F1611 |
BGC420
High Frequency Products
6
Edition A13, 05/99
Layout Proposal
Part List for Vcc=3V, I
CC
￡
7mA
Component
Value
Comment
L1
C2
C3
C4
C5
C6
C7
Rx
Substrate
BGC420
100nH
RFC
1nF
Compensation Capacitor for Low Frequency Stabilization
100pF
RFC
150pF
Blocking Capacitor
100nF
Blocking Capacitor
220pF
Coupling Capacitor
220pF
Coupling Capacitor
82
W
h=0.5mm
Current Adjust
Fr4,
e
r
=4.5
This proposal demonstrates how to use the BGC420 as a Self-Biased Transistor. As for a discrete Transistor
matching circuits have to be applied. A good starting point for various applications are the Application Notes
provided for the BFP420.
LQ
C7
9F
9
%*&
C2
C4
C5
Rx
L1
C3
C6
B
Figure 2. Layout Proposal
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| Q62702-F1613 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode |
| Q62702-F1627 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
| Q62702-F1628 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
| Q62702-F1645 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) |
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