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參數(shù)資料
| 型號： | Q62702-F1611 |
| 廠商： | SIEMENS AG |
| 英文描述： | NPN Silicon RF Transistor (For low-noise amplifiers up to 2GHz at collector currents from 0.5 mA to 20 mA.) |
| 中文描述： | NPN硅射頻晶體管（低噪聲放大器了從0.5毫安在集電極電流為2GHz至20毫安。） |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 101K |
| 代理商： | Q62702-F1611 |
BGC420
High Frequency Products
5
Edition A13, 05/99
Typical Application
Remarks:
1)
2)
3)
4)
To provide low frequency stability C2 should be 10 times C3.
Be aware that also coupling capacitors determine the switching times.
The collector current at Q1 can be estimated by Ic=0.6V / Rx[
W
].
Place C2 as close to the device as possible.
D1
D2
R1 (47k)
Q2
R2 (500R)
R3
10k
R4 (2k7)
Q1
Vc,8
Vb,3
GND,7,2
RFin,1
RFout,6
Vr,5
Vcc,4
on
off
C2, 1nF
L1,100nH
C3, 100pF
Rx
3
C4,150pF C5,100nF
Figure 1. Typical Application and Internal Circuit
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| Q62702-F1613 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode |
| Q62702-F1627 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
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| Q62702-F1645 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon RF Transistor (For broadband amplifiers up to 1GHz at collector currents from 1mA to 20mA) |
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