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參數(shù)資料
| 型號： | PZTA42 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN High Voltage Amplifier(NPN高電壓放大器) |
| 中文描述： | 500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數(shù)： | 2/14頁 |
| 文件大?。?/td> | 657K |
| 代理商： | PZTA42 |
M
Electrical Characteristics
TA = 25
°
C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector-Cutoff Current
I
EBO
Emitter-Cutoff Current
Symbol
Parameter
Test Conditions
Min
Max
Units
I
C
= 1.0 mA, I
B
= 0
I
C
= 100
μ
A, I
E
= 0
I
E
= 100
μ
A, I
C
= 0
V
CB
= 200 V, I
E
= 0
V
EB
= 6.0 V, I
C
= 0
300
300
6.0
V
V
V
μ
A
μ
A
0.1
0.1
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 1.0 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 30 mA, V
CE
= 10 V
I
C
= 20 mA, I
B
= 2.0 mA
I
C
= 20 mA, I
B
= 2.0 mA
25
40
40
V
CE(
sat
)
V
BE(
sat
)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.5
0.9
V
V
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
Spice Model
NPN (Is=34.9f Xti=3 Eg=1.11 Vaf=100 Bf=2.65K Ne=1.708 Ise=16.32p Ikf=23.79m Xtb=1.5 Br=9.769 Nc=2
Isc=0 Ikr=0 Rc=7 Cjc=14.23p Mjc=.5489 Vjc=.75 Fc=.5 Cje=49.62p Mje=.4136 Vje=.75 Tr=934.3p Tf=1.69n
Itf=5 Vtf=20 Xtf=150 Rb=10)
I
= 10 mA, V
CE
= 20 V,
f = 100 MHz
V
CB
= 20 V, I
E
= 0, f = 1.0 MHz
50
MHz
C
cb
Collector-Base Capacitance
3.0
pF
NPN High Voltage Amplifier
(continued)
Typical Characteristics
DC Current Gain
vs Collector Current
0.1
1
10
100
20
40
60
80
100
120
140
I - COLLECTOR CURRENT (mA)
h
F
- 40 oC
25 °C
V = 5V
125 °C
Collector-Emitter Saturation
Voltage vs Collector Current
P
0.1
1
10
100
0.05
0.1
0.15
0.2
0.25
0.3
I - COLLECTOR CURRENT (mA)
V
C
β
= 10
- 40
o
C
25
°
C
125
°
C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PZTA42 T/R | 功能描述:兩極晶體管 - BJT TRANS HV TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PZTA42,115 | 功能描述:兩極晶體管 - BJT TRANS HV TAPE-7 RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| PZTA42 | 制造商:Fairchild Semiconductor Corporation 功能描述:TRANSISTOR NPN SOT-223 |
| PZTA42 | 制造商:Fairchild Semiconductor Corporation 功能描述:NPN 300V HI BIPOLR SOT223 SNGL |
| PZTA42_07 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon High-Voltage Transistors Low collector-emitter saturation voltage |
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