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參數(shù)資料
| 型號： | PZTA63 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP Darlington Transistor |
| 中文描述： | 1200 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 29K |
| 代理商： | PZTA63 |
M
PNP Darlington Transistor
This device is designed for applications requiring extremely high
current gain at currents to 800 mA. Sourced from Process 61.
See MPSA64 for characteristics.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CES
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
30
30
10
1.2
V
V
V
A
°
C
-55 to +150
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
MPSA63
625
5.0
83.3
200
*MMBTA63
350
2.8
**PZTA63
1,000
8.0
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
mW
mW/
°
C
°
C/W
°
C/W
R
θ
JC
R
θ
JA
357
125
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**
Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm
2
.
PZTA63
B
C
C
SOT-223
E
MPSA63
CBE
TO-92
MMBTA63
C
B
E
SOT-23
Mark: 2U
Discrete POWE R & Signal
T echnologies
1997 Fairchild Semiconductor Corporation
A63, Rev A
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| R-545.0DA | INNOLINE DC/DC-Converter |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PZTA63_10 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP Darlington Transistor |
| PZTA64 | 功能描述:達(dá)林頓晶體管 PNP Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| PZTA64_Q | 功能描述:達(dá)林頓晶體管 PNP Transistor Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| PZTA64T1 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:PNP SILICON DARLINGTON TRANSISTOR SURFACE MOUNT |
| PZTA65 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:PNP Darlington Transistor |
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