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參數資料
| 型號： | PXT3906 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | PNP switching transistor |
| 中文描述： | 100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SC-62, 3 PIN |
| 文件頁數： | 3/8頁 |
| 文件大?。?/td> | 45K |
| 代理商： | PXT3906 |
1999 Apr 14
3
Philips Semiconductors
Product specification
PNP switching transistor
PXT3906
THERMAL CHARACTERISTICS
Note
1.
Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-s
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
note 1
104
24
K/W
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
50
50
UNIT
I
CBO
I
EBO
h
FE
collector cut-off current
emitter cut-off current
DC current gain
I
E
= 0; V
CB
=
30 V
I
C
= 0; V
EB
=
6 V
V
CE
=
1 V; (see Fig.2)
I
C
=
0.1 mA
I
C
=
1 mA
I
C
=
10 mA
I
C
=
50 mA
I
C
=
100 mA
I
C
=
10 mA; I
B
=
1 mA
I
C
=
50 mA; I
B
=
5 mA
I
C
=
10 mA; I
B
=
1 mA
I
C
=
50 mA; I
B
=
5 mA
I
E
= i
e
= 0; V
CB
=
5 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
500 mV; f = 1 MHz
I
C
=
10 mA; V
CE
=
20 V; f = 100 MHz
I
C
=
100
μ
A; V
CE
=
5 V; R
S
= 1 k
;
f = 10 Hz to 15.7 kHz
nA
nA
60
80
100
60
30
650
250
300
250
400
850
950
4.5
10
4
V
CEsat
collector-emitter saturation
voltage
mV
mV
mV
mV
pF
pF
MHz
dB
V
BEsat
base-emitter saturation voltage
C
c
C
e
f
T
F
collector capacitance
emitter capacitance
transition frequency
noise figure
Switching times (between 10% and 90% levels);
(see Fig.3)
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
=
10 mA; I
Bon
=
1 mA; I
Boff
= 1 mA
65
35
35
300
225
75
ns
ns
ns
ns
ns
ns
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