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參數(shù)資料
| 型號： | PTF080451 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz |
| 中文描述： | LDMOS射頻功率場效應(yīng)晶體管45瓦，869-960兆赫 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 158K |
| 代理商： | PTF080451 |
Data Sheet
1 of 9
2004-06-24
PTF080451
LDMOS RF Power Field Effect Transistor
45 W, 869–960 MHz
Features
Broadband internal matching
Typical EDGE performance
- Average output power = 22.5 W
- Gain = 18 dB
- Efficiency = 40%
Typical CW performance
- Output power at P–1dB = 60 W
- Gain = 17 dB
- Efficiency = 60%
Integrated ESD protection: Human Body
Model, Class 1 (minimum)
Excellent thermal stability
Low HCI drift
Capable of handling 10:1 VSWR @ 28 V,
45 W (CW) output power
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Description
The PTF080451 is a 45 W, internally matched
GOLDMOS
FET intended
for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold
metallization ensures excellent device lifetime and reliability.
PTF080451E
Package 30265
RF Characteristics
at T
CASE
= 25°C unless otherwise indicated
EDGE Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 450 mA, P
OUT
= 22.5 W, f = 959.8 MHz
Characteristic
Error Vector Magnitude
Modulation Spectrum @ 400 kHz
Modulation Spectrum @ 600 kHz
Gain
Drain Efficiency
Symbol
EVM (RMS)
ACPR
ACPR
G
ps
η
D
Min
—
—
—
—
—
Typ
2.0
–62
–76
18
40
Max
—
—
—
—
—
Units
%
dBc
dBc
dB
%
Two–Tone Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ
= 450 mA, P
OUT
= 45 W PEP, f = 960 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G
ps
η
D
IMD
Min
17
40
—
Typ
18
42
–32
Max
—
—
–30
Units
dB
%
dBc
EDGE Modulation Spectrum Performance
V
DD
= 28 V, I
DQ
= 450 mA, f = 959.8 MHz
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
36
38
40
42
44
46
48
50
Output Power (dBm)
M
10
15
20
25
30
35
40
45
50
55
D
Efficiency
400 kHz
600 kHz
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTF080451E | LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz |
| PTF080601 | LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz |
| PTF080601A | LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz |
| PTF080601E | LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz |
| PTF080601F | LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF080451E | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 45 W, 869-960 MHz |
| PTF080451E-DS1A | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 45W, 869-960 MHz |
| PTF080451EV1 | 制造商:Infineon Technologies AG 功能描述:SP00001009_HIGH POWER RF LDMOS THERMALLY |
| PTF080601 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz |
| PTF080601A | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz |
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