參數(shù)資料
型號(hào): PTB23006U
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Microwave power transistor
中文描述: S BAND, Si, NPN, RF POWER TRANSISTOR
封裝: HERMETIC SEALED, METAL CERAMIC, SOT-440A, 3 PIN
文件頁數(shù): 3/12頁
文件大小: 88K
代理商: PTB23006U
1997 Feb 19
3
Philips Semiconductors
Preliminary specification
Microwave power transistor
PTB23006U
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
Up to 0.2 mm from ceramic.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
V
CES
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
soldering temperature
open emitter
R
BE
= 0
open base
open collector
65
40
40
15
3
0.75
11
+200
200
235
V
V
V
V
A
W
°
C
°
C
°
C
T
mb
= 75
°
C
t
10 s; note 1
Fig.2 Power derating curve.
handbook, halfpage
0
50
100
200
4
0
MLC461
150
Tmb
o
Ptot
(W)
8
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