參數(shù)資料
型號(hào): PTB23006U
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Microwave power transistor
中文描述: S BAND, Si, NPN, RF POWER TRANSISTOR
封裝: HERMETIC SEALED, METAL CERAMIC, SOT-440A, 3 PIN
文件頁數(shù): 2/12頁
文件大?。?/td> 88K
代理商: PTB23006U
1997 Feb 19
2
Philips Semiconductors
Preliminary specification
Microwave power transistor
PTB23006U
FEATURES
Very high power gain
Diffused emitter ballasting resistors
improve ruggedness
Interdigitated emitter-base
structure
Gold metallization with barrier layer
to prevent electromigration and
gold diffusion during life
Multicell geometry improves power
sharing and reduces thermal
resistance
Internal input prematching network.
APPLICATIONS
Intended for use in common-base,
class C power amplifiers at
frequencies up to 2.3 GHz.
DESCRIPTION
NPN silicon planar epitaxial
microwave power transistor in a
SOT440A hermetically sealed metal
ceramic flange package, with base
connected to flange.
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
°
C in a common-base class C
narrowband amplifier.
MODE OF
OPERATION
f
(GHz)
V
CC
(V)
P
L
(W)
G
p
(dB)
η
C
(%)
Z
i
; Z
L
(
)
see Figs 5
and 6
Class C (CW)
2
28
>5
>9
>40
PINNING - SOT440A
PIN
DESCRIPTION
1
2
3
collector
emitter
base connected to flange
Fig.1 Simplified outline and symbol.
handbook, 4 columns
e
c
b
MAM131
3
1
2
Top view
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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