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參數(shù)資料
| 型號(hào)： | PSMN040-200W |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-channel TrenchMOS transistor |
| 中文描述： | 50 A, 200 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 87K |
| 代理商： | PSMN040-200W |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
PSMN040-200W
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); V
GS
≥
10 V
Fig.3. Safe operating area
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
)
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
)
Normalised Power Derating, PD (%)
0
10
20
30
40
50
60
70
80
90
100
0
25
50
75
100
125
150
175
Mounting Base temperature, Tmb (C)
0.001
0.01
0.1
1
1E-06
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
Pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
single pulse
D = 0.5
0.2
0.1
0.05
0.02
tp
D = tp/T
D
P
T
Normalised Current Derating, ID (%)
0
10
20
30
40
50
60
70
80
90
100
0
25
50
75
100
125
150
175
Mounting Base temperature, Tmb (C)
0
5
10
15
20
25
30
35
40
45
50
55
60
0
0.2
0.4
0.6
Drain-Source Voltage, VDS (V)
0.8
1
1.2
1.4
1.6
1.8
2
Drain Current, ID (A)
4.4 V
Tj = 25 C
VGS = 10V
4.6 V
4.8 V
5 V
8 V
4.2 V
6 V
1
10
100
1000
1
10
100
1000
Drain-Source Voltage, VDS (V)
Peak Pulsed Drain Current, IDM (A)
D.C.
100 ms
10 ms
RDS(on) = VDS/ ID
1 ms
tp = 10 us
100 us
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
0.2
0
5
10
20
25
30
35
40
Dr15
Drain-Source On Resistance, RDS(on) (Ohms)
4.6 V
4.4 V
4.2 V
VGS = 10V
Tj = 25 C
6V
4.8 V
5 V
August 1999
3
Rev 1.000
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