參數(shù)資料
型號： PSMN004-55W
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel logic level TrenchMOS transistor
中文描述： 100 A, 55 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 6/8頁
文件大?。?/td> 124K
代理商： PSMN004-55W
Philips Semiconductors
Product specification
N-channel logic level TrenchMOS
transistor
PSMN004-55W
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
)
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.15. Maximum permissible non-repetitive
avalanche current (I
) versus avalanche time (t
AV
);
unclamped inductive load
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
0
40
80
120
160
Gate charge, QG (nC)
200
240
280
320
360
400
440
Gate-source voltage, VGS (V)
ID = 100 A
Tj = 25 C
VDD = 11 V
VDD = 44 V
1
0.001
10
100
1000
0.01
0.1
1
10
Avalanche time, t
AV
(ms)
Maximum Avalanche Current, I
AS
(A)
Tj prior to avalanche = 150 C
25 C
0
10
20
30
40
50
60
70
80
90
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
Source-Drain Voltage, VSDS (V)
Source-Drain Diode Current, IF (A)
Tj = 25 C
175 C
VGS = 0 V
October 1999
6
Rev 1.100
相關PDF資料
PDF描述
PSMN004-60P N-channel enhancement mode field-effect transistor
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PSMN008-75P N-channel enhancement mode field-effect transistor
PSMN009-100W Circular Connector; Body Material:Aluminum Alloy; Series:MS3111; Number of Contacts:6; Connector Shell Size:10; Connecting Termination:Solder; Circular Shell Style:Cable Receptacle; Circular Contact Gender:Socket
相關代理商/技術參數(shù)
參數(shù)描述
PSMN004-55W,127 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN004-60B 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS SiliconMAX standard level FET
PSMN004-60B /T3 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN004-60B,118 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN004-60P 制造商:NXP Semiconductors 功能描述:MOSFET N TO-220
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