參數(shù)資料
型號： PSMN004-25P
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel logic level TrenchMOS transistor
中文描述： 75 A, 25 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： PLASTIC, TO-220AB, 3 PIN
文件頁數(shù)： 2/9頁
文件大?。?/td> 101K
代理商： PSMN004-25P
Philips Semiconductors
Product specification
N-channel logic level TrenchMOS
transistor
PSMN004-25B, PSMN004-25P
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
0.65
K/W
SOT78 package, vertical in still air
SOT404 package, pcb mounted, minimum
footprint
-
-
60
50
-
-
K/W
K/W
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 75 A;
t
p
= 100
μ
s; T
j
prior to avalanche = 25C;
V
DD
≤
15 V; R
GS
= 50
; V
GS
= 5 V
MIN.
-
MAX.
120
UNIT
mJ
I
AS
Non-repetitive avalanche
current
-
75
A
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
25
22
1
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
-
-
1.5
2
-
-
-
2.3
3.5
4.3
4
5
-
5.4
-
9.25
0.02
100
0.05
10
-
500
97
-
20
-
39
-
45
-
220
-
435
-
320
-
V
V
V
V
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175C
T
j
= -55C
R
DS(ON)
Drain-source on-state
resistance
V
GS
= 10 V; I
= 25 A
V
GS
= 5 V; I
= 25 A
V
GS
= 4.5 V; I
= 25 A
V
GS
= 5 V; I
= 25 A; T
= 175C
m
m
m
m
nA
μ
A
μ
A
nC
nC
nC
ns
ns
ns
ns
I
GSS
I
DSS
Gate-source leakage current V
GS
=
±
10 V; V
= 0 V;
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
V
DS
= 25 V; V
GS
= 0 V;
T
j
= 175C
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
d
I
D
= 75 A; V
DD
= 15 V; V
GS
= 5 V
V
DD
= 15 V; R
= 1.2
V
= 5 V; R
= 5.6
Resistive load
Internal drain inductance
Internal drain inductance
Measured tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 20 V; f = 1 MHz
-
-
3.5
4.5
-
-
nH
nH
L
s
Internal source inductance
-
7.5
-
nH
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
6000
1700
1400
-
-
-
pF
pF
pF
October 1999
2
Rev 1.100
相關(guān)PDF資料
PDF描述
PSMN004-36B N-channel enhancement mode field-effect transistor
PSMN004-36P N-channel enhancement mode field-effect transistor
PSMN004-55W N-channel logic level TrenchMOS transistor
PSMN004-60P N-channel enhancement mode field-effect transistor
PSMN005-25D N-channel logic level TrenchMOS transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PSMN004-36B 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor
PSMN004-36B /T3 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN004-36B,118 功能描述:MOSFET TAPE13 MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
PSMN004-36P 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel enhancement mode field-effect transistor
PSMN004-55W 功能描述:MOSFET RAIL PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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