參數(shù)資料
型號: PSD853F2-15JIT
廠商: STMICROELECTRONICS
元件分類: 微控制器/微處理器
英文描述: 128K X 8 FLASH, 27 I/O, PIA-GENERAL PURPOSE, PQCC52
封裝: PLASTIC, LCC-52
文件頁數(shù): 77/103頁
文件大?。?/td> 1180K
代理商: PSD853F2-15JIT
75/103
PSD8XXF2/3/4/5
Table 45. DC Characteristics (3V devices)
Note: 1. Reset (RESET) has hysteresis. VIL1 is valid at or below 0.2VCC –0.1. VIH1 is valid at or above 0.8VCC.
2. CSI deselected or internal PD is active.
3. PLD is in non-Turbo mode, and none of the inputs are switching.
4. Please see Figure 33 for the PLD current calculation.
5. IOUT = 0 mA
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
VIH
High Level Input Voltage
3.0 V < VCC < 3.6 V
0.7VCC
VCC +0.5
V
VIL
Low Level Input Voltage
3.0 V < VCC < 3.6 V
–0.5
0.8
V
VIH1
Reset High Level Input Voltage
(Note 1)
0.8VCC
VCC +0.5
V
VIL1
Reset Low Level Input Voltage
(Note 1)
–0.5
0.2VCC –0.1
V
VHYS
Reset Pin Hysteresis
0.3
V
VLKO
VCC (min) for Flash Erase and
Program
1.5
2.2
V
VOL
Output Low Voltage
IOL = 20 A, VCC = 3.0 V
0.01
0.1
V
IOL = 4 mA, VCC = 3.0 V
0.15
0.45
V
VOH
Output High Voltage Except
VSTBY On
IOH = –20 A, VCC = 3.0 V
2.9
2.99
V
IOH = –1 mA, VCC = 3.0 V
2.7
2.8
V
VOH1
Output High Voltage VSTBY On
IOH1 = 1 A
VSTBY – 0.8
V
VSTBY
SRAM Stand-by Voltage
2.0
VCC
V
ISTBY
SRAM Stand-by Current
VCC = 0 V
0.5
1
A
IIDLE
Idle Current (VSTBY input)
VCC > VSTBY
–0.1
0.1
A
VDF
SRAM Data Retention Voltage
Only on VSTBY
2V
ISB
Stand-by Supply Current
for Power-down Mode
CSI >VCC –0.3 V (Notes
2,3)
25
100
A
ILI
Input Leakage Current
VSS < VIN < VCC
–1
±0.1
1
A
ILO
Output Leakage Current
0.45 < VIN < VCC
–10
±5
10
A
ICC (DC)
(Note 5)
Operating
Supply
Current
PLD Only
PLD_TURBO = Off,
f = 0 MHz (Note 3)
0
A/PT
PLD_TURBO = On,
f = 0 MHz
200
400
A/PT
Flash memory
During Flash memory
WRITE/Erase Only
10
25
mA
Read only, f = 0 MHz
0
mA
SRAM
f = 0 MHz
0
mA
ICC (AC)
(Note 5)
PLD AC Adder
note 4
Flash memory AC Adder
1.5
2.0
mA/
MHz
SRAM AC Adder
0.8
1.5
mA/
MHz
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