參數(shù)資料
型號: PSD311R
英文描述: Field Programmable Microcontroller Peripherals(可編程邏輯,無SRAM,19個(gè)可編程I/O,通用PLD有12個(gè)輸入)
中文描述: 現(xiàn)場可編程微控制器外圍設(shè)備(可編程邏輯,無的SRAM,19余個(gè)可編程輸入/輸出,通用PLD的有12個(gè)輸入)
文件頁數(shù): 63/127頁
文件大?。?/td> 682K
代理商: PSD311R
PSD3XX Famly
2-63
To clear all locations of their programmed contents, expose the window packaged device to
an ultra-violet light source. A dosage of 30 W second/cm
2
is required (40 W second/cm
2
for
PSD3XXL versions). This dosage can be obtained with exposure to a wavelength of 2537
and intensity of 12000 μW/cm
2
for 40 to 45 minutes (50 to 60 minutes for PSD3XXL
versions). The device should be about 1 inch from the source, and all filters should be
removed from the UV light source prior to erasure.
The PSD3XX and similar devices will erase with light sources having wavelengths
shorter than 4000 . Although the erasure times will be much longer than with UV sources
at 2537 , exposure to fluorescent light and sunlight eventually erases the device. For
maximum system reliability, these sources should be avoided. If used in such an
environment, the package window should be covered by an opaque substance. Upon
delivery from WSI, or after each erasure, the PSD3XX device has all bits in the PAD and
EPROM in the “1” or high state. The configuration bits are in the “0” or low state. The code,
configuration, and PAD MAP data are loaded through the procedure of programming
Information for programming the device is available directly from WSI. Please contact your
local sales representative.
Erasure and
Programmng
相關(guān)PDF資料
PDF描述
PSD314R Field Programmable Microcontroller Peripherals(可編程邏輯,無SRAM,19個(gè)可編程I/O,通用PLD有16個(gè)輸入)
PSD302L Field Programmable Microcontroller Peripherals(可編程邏輯,16K位SRAM,19個(gè)可編程I/O,通用PLD有16個(gè)輸入)
PSD303R Field Programmable Microcontroller Peripherals(可編程邏輯,無SRAM,19個(gè)可編程I/O,通用PLD有16個(gè)輸入)
PSD304RL Field Programmable Microcontroller Peripherals(可編程邏輯,無SRAM,19個(gè)可編程I/O,通用PLD有16個(gè)輸入)
PSD312L Field Programmable Microcontroller Peripherals(可編程邏輯,16K位SRAM,4位頁寄存器,19個(gè)可編程I/O,通用PLD有16個(gè)輸入)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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