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參數(shù)資料
| 型號： | PS2607L |
| 廠商： | NEC Corp. |
| 英文描述： | Optocoupler Applications |
| 中文描述： | 光耦應(yīng)用 |
| 文件頁數(shù)： | 8/38頁 |
| 文件大?。?/td> | 223K |
| 代理商： | PS2607L |
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7
The turn-off time can be greatly reduced by the base-emitter resistance (R
L
). In Test circuit 4, the turn-off time of the test circuit
having resistance RL is about 1/30 of that of the test circuit without the resistance. This is because the carrier (photocurrent)
stored in the collector-base capacitor (C
C-B
) is quickly released through the base-emitter resistor (R
BE
). However, note that part
of a photocurrent generating on the base of the phototransistor flows through the R
BE
resistor and reduces the current transfer
ratio (CTR). Compare the voltage level of the output waveform in Photo 4 with that of the output waveform in Photo 2. The
current transfer ratio of the test circuit having a base-emitter resistor of 200 k
is half or less of that of the test circuit without the
resistance. (See 3.3 for reduction of the current transfer ratio CTR.)
For reference, Fig. 2-3 shows the switching-time vs. R
L
characteristics and Fig. 2-4 shows the switching-time vs. R
BE
characteris-
tics.
x
I
Current transfer ratio of 166%
Dotted line:
Current transfer ratio of 274%
at Ir = 5mA
t r
t d
1000
500
200
100
50
20
10
5
2
1
100
500
1 k
5 k
10 k
50 k 100 k
t f
t s
F
= 10 mA Vcc = 5 V
Vcc = 5V
Vo
R
L
I
F =
10
m
A
51
I
Load Resistance R
L
(
)
V
CC
= 5 V, I
F
= 10mA
R
L
= 5
Solid line: Emitter follower
Dotted line: Emitter grounded
160
140
120
100
80
60
40
20
0
100
200
500
1000
8
t
off
t
off
Base-Emitter Resistance R
BE
(k
)
S
μ
s
S
μ
s
Load Resistance R
L
(
)
1000
500
200
100
50
20
10
5
2
1
100
500
1 k
5 k
10 k
50 k 100 k
t
f
t
s
t
r
t
d
V
CC
= 5V
Vo
R
L
I
F =
5
m
A I
51
F
= 5 mA V
CC
= 5 V
I
Current transfer ratio of 166%
Dotted line:
Current transfer ratio of 274%
at Ir = 5 mA
x
S
μ
s
S
μ
s
Base-Emitter Resistance R
BE
(k
)
Vcc = 5 V, I
F
= 5mA
R
1
= 5
Solid line: Emitter follower
Dotted line: Emitter grounded
160
140
120
100
80
60
40
20
0
t
off
t
on
100
200
500
1000
8
Fig. 2-3 Switching-Time vs. R
L
Characteristics
Fig. 2-4 Switching-Time vs. R
BE
Characteristics
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PS2608 | Optocoupler Applications |
| PS2608L | Optocoupler Applications |
| PS2621 | Optocoupler Applications |
| PS2621L | Optocoupler Applications |
| PS2622 | Optocoupler Applications |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PS2608 | 功能描述:晶體管輸出光電耦合器 DISC-BY-CEL-1/01 DIP-6 PHOTOCOUPLER RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| PS2608L | 功能描述:晶體管輸出光電耦合器 DISC BY CEL 7/01 SO-6 PHOTOCOUPLER RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| PS260MA24 | 功能描述:EMI/RFI 抑制器及鐵氧體 PCB Shield Enclosure RoHS:否 制造商:Fair-Rite 產(chǎn)品:Ferrite Cores 阻抗:365 Ohms 容差: 最大直流電流: 最大直流電阻: 工作溫度范圍:- 55 C to + 125 C 封裝 / 箱體: 端接類型:SMD/SMT |
| PS260MA24A | 功能描述:EMI/RFI 抑制器及鐵氧體 PCB Shield Enclosure Adhesive Base RoHS:否 制造商:Fair-Rite 產(chǎn)品:Ferrite Cores 阻抗:365 Ohms 容差: 最大直流電流: 最大直流電阻: 工作溫度范圍:- 55 C to + 125 C 封裝 / 箱體: 端接類型:SMD/SMT |
| PS260MA44 | 功能描述:EMI/RFI 抑制器及鐵氧體 PCB Shield Enclosure RoHS:否 制造商:Fair-Rite 產(chǎn)品:Ferrite Cores 阻抗:365 Ohms 容差: 最大直流電流: 最大直流電阻: 工作溫度范圍:- 55 C to + 125 C 封裝 / 箱體: 端接類型:SMD/SMT |
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