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參數(shù)資料
| 型號： | PS2607L |
| 廠商： | NEC Corp. |
| 英文描述： | Optocoupler Applications |
| 中文描述： | 光耦應(yīng)用 |
| 文件頁數(shù)： | 14/38頁 |
| 文件大?。?/td> | 223K |
| 代理商： | PS2607L |
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13
ELIMINATION OF INPUT SURGES
Unwanted external noise and output leakage currents (e.g., collector current I
C
) of a preceding transistor may cause the light-
emitting diode (LED) of an optocoupler to light involuntarily. Usually, a circuit (connecting a resistor in parallel to the LED) is
provided to absorb such input surges. To prevent malfunction of an optocoupler, it is also effective to insert a resistor (R
BE
) that
increases the input threshold current (by the use of the input-output characteristics) between the base and the emitter of the
phototransistor. In this case, the current transfer ratio (CTR) must be low. (See 3.3 for Reduction of CTR.)
60
50
40
30
20
10
0
R
BE
=
8
200 k
100 k
50 k
30 k
20 k
10 k
5 k
V
CE
= 5 V
(PS2601)
1
2
3
4 5
10
20
30 40 50
C
C
Figure 2-9. I
C
vs. I
F
Characteristics (Example)
Forward Current I
F
(mA)
APPLICATION TO HIGH POTENTIAL CIRCUIT
The withstanding voltage between the collector and the emitter of the PS2601 optocoupler is 80 V (
MAX
). To make the
optocoupler available to higher withstanding voltages, use the collector-base junction photodiode as a light-sensitive element and
connect a high-voltage circuit to the output of the optocoupler. In this case, the output of the photodiode must be amplified
because it is smaller than the usual output.
Fig. 2-10 shows an example of an optocoupler applied to a high-voltage circuit. In this sample circuit, the photocurrent (I
CBL
) of
the optocoupler is fed to the base of the high-voltage transistor and a current (I
F
) passes forward through the light-emitting diode
(LED). Fig. 2-11 shows the I
CBL
vs. I
F
characteristics. Before working on applications outside the rated values of the
optocouplers, evaluate the practical circuits fully by contacting CEL.
C
C
μ
A
Figure 2-10. Application to a
High Voltage Circuit
Figure 2-11. I
CBL
vs. I
F
Characteristic
PS2601
I
CBL
H
t
r
)
200
100
50
40
30
20
10
5
4
3
2
1
1
2
3
4 5
10
20
30 40 50
80
V
CB
= 100V
(PS2601)
I
F
I
CBL
CTR = 274%
CTR = 166%
100V
A
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PS2608 | 功能描述:晶體管輸出光電耦合器 DISC-BY-CEL-1/01 DIP-6 PHOTOCOUPLER RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| PS2608L | 功能描述:晶體管輸出光電耦合器 DISC BY CEL 7/01 SO-6 PHOTOCOUPLER RoHS:否 制造商:Vishay Semiconductors 輸入類型:DC 最大集電極/發(fā)射極電壓:70 V 最大集電極/發(fā)射極飽和電壓:0.4 V 絕緣電壓:5300 Vrms 電流傳遞比:100 % to 200 % 最大正向二極管電壓:1.65 V 最大輸入二極管電流:60 mA 最大集電極電流:100 mA 最大功率耗散:100 mW 最大工作溫度:+ 110 C 最小工作溫度:- 55 C 封裝 / 箱體:DIP-4 封裝:Bulk |
| PS260MA24 | 功能描述:EMI/RFI 抑制器及鐵氧體 PCB Shield Enclosure RoHS:否 制造商:Fair-Rite 產(chǎn)品:Ferrite Cores 阻抗:365 Ohms 容差: 最大直流電流: 最大直流電阻: 工作溫度范圍:- 55 C to + 125 C 封裝 / 箱體: 端接類型:SMD/SMT |
| PS260MA24A | 功能描述:EMI/RFI 抑制器及鐵氧體 PCB Shield Enclosure Adhesive Base RoHS:否 制造商:Fair-Rite 產(chǎn)品:Ferrite Cores 阻抗:365 Ohms 容差: 最大直流電流: 最大直流電阻: 工作溫度范圍:- 55 C to + 125 C 封裝 / 箱體: 端接類型:SMD/SMT |
| PS260MA44 | 功能描述:EMI/RFI 抑制器及鐵氧體 PCB Shield Enclosure RoHS:否 制造商:Fair-Rite 產(chǎn)品:Ferrite Cores 阻抗:365 Ohms 容差: 最大直流電流: 最大直流電阻: 工作溫度范圍:- 55 C to + 125 C 封裝 / 箱體: 端接類型:SMD/SMT |
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