參數(shù)資料
型號： PS12013-A
廠商： Powerex Power Semiconductors
英文描述： FLAT-BASE TYPE INSULATED TYPE
中文描述： 平性基地型絕緣型
文件頁數(shù)： 3/6頁
文件大?。?/td> 387K
代理商： PS12013-A
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS12013-A
FLAT-BASE TYPE
INSULATED TYPE
Jan. 2000
T
C
Condition
Symbol
T
j
T
stg
T
C
Item
Ratings
–20 ~ +125
–40 ~ +125
–20 ~ +100
Unit
°
C
°
C
°
C
(Note 2)
—
(Fig. 3)
60 Hz sinusoidal AC for 1 minute, between all terminals
and base plate.
Mounting screw: M3.5
V
ISO
—
Junction temperature
Storage temperature
Module case operating temperature
Isolation voltage
Mounting torque
2500
0.78 ~ 1.27
Vrms
N·m
TOTAL SYSTEM
Note 2) : The item defines the maximum junction temperature for the power elements (IGBT/Diode) of the ASIPM to ensure safe operation.
However, these power elements can endure instantaneous junction temperature as high as 150
°
C. To make use of this additional
temperature allowance, a detailed study of the exact application conditions is required and, accordingly, necessary information is
to be provided before use.
CASE TEMPERATURE MEASUREMENT POINT (3mm from the base surface)
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
—
—
—
—
—
Inverter IGBT (1/6)
Inverter FWDi (1/6)
Brake IGBT
Brake FWDi
Case to fin, thermal grease applied (1 Module)
Junction to case Thermal
Resistance
Contact Thermal Resistance
R
th(jc
)
Q
R
th(jc)F
R
th(jc
)
QB
R
th(jc)FB
R
th(c-f)
Condition
Symbol
Item
Ratings
Typ.
—
—
—
—
—
Min.
THERMAL RESISTANCE
Max.
3.0
7.3
3.0
7.3
0.040
Unit
(Fig. 3)
mA
mA
V
V
k
150
50
2.0
4.0
—
—
—
1.4
3.0
150
—
—
0.8
2.5
—
V
DH
Circuit Current
V
DL
Circuit Current
Input on threshold voltage
Input off threshold voltage
Input pull-up resistor
Min.
V
μ
s
μ
s
μ
s
μ
s
μ
s
3.5
2.0
1.4
4.0
1.6
—
—
1.2
0.5
2.2
0.9
0.2
I
DH
I
DL
V
th(on)
V
th(off)
R
i
V
CC
≤
800V, Input = ON (One-Shot)
Tj = 125
°
C start
13.5V
≤
V
DH
= V
DB
=
≤
16.5V
V
CC
≤
800V, Tj
≤
125
°
C,
Ic < I
OL
(CL) operation level, Input = ON,
13.5V
≤
V
DH
= V
DB
=
≤
16.5V
V
DL
= 5V, V
DH
= 15V, V
CIN
= 5V
V
DL
= 5V, V
DH
= 15V, V
CIN
= 5V
V
FBr
ton
tc(on)
toff
tc(off)
trr
V
CE(sat)
V
EC
V
DL
= 5V, V
DH
= V
DB
= 15V Input = ON,
Tj = 25
°
C, Ic = 5A
Tj = 25
°
C, Ic = –5A, Input = OFF
Condition
Symbol
Item
Ratings
Typ.
Max.
—
—
Unit
No destruction
F
O
output by protection operation
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C, V
DH
= 15V , V
DB
= 15V, V
DL
= 5V unless otherwise noted)
Collector-emitter saturation
voltage
FWDi forward voltage
Brake IGBT
Collector-emitter saturation voltage
Brake diode forward voltage
V
CE(sat)Br
Tj = 25
°
C, I
F
= 5A, Input = OFF
1/2 Bridge inductive, Input = ON
V
CC
= 600V, Ic = 5A, Tj = 125
°
C
V
DL
= 5V, V
DH
= 15V, V
DB
= 15V
Note : ton, toff include delay time of the internal control
circuit.
V
DL
= 5V, V
DH
= 15V Input = ON, Tj = 25
°
C, Ic = 5A
Switching times
FWD reverse recovery time
Short circuit endurance
(Output, Arm, and Load, Short
Circuit Modes)
Switching SOA
—
—
0.3
—
—
—
—
—
—
—
3.6
3.5
3.6
V
V
V
No destruction
No protecting operation
No F
O
output
Integrated between input terminal-V
DH
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