參數(shù)資料
型號(hào): PS12012-A
廠商: Powerex Power Semiconductors
英文描述: FLAT-BASE TYPE INSULATED TYPE
中文描述: 平性基地型絕緣型
文件頁(yè)數(shù): 3/6頁(yè)
文件大?。?/td> 393K
代理商: PS12012-A
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS12012-A
FLAT-BASE TYPE
INSULATED TYPE
Jan. 2000
T
C
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
Inverter IGBT (1/6)
Inverter FWDi (1/6)
Brake IGBT
Brake FWDi
Case to fin, thermal grease applied (1 Module)
Junction to case Thermal
Resistance
Contact Thermal Resistance
R
th(jc
)
Q
R
th(jc)F
R
th(jc
)
QB
R
th(jc)FB
R
th(c-f)
Condition
Symbol
T
j
T
stg
T
C
Item
Ratings
–20 ~ +125
–40 ~ +125
–20 ~ +100
Unit
°
C
°
C
°
C
(Note 2)
(Fig. 3)
60 Hz sinusoidal AC for 1 minute, between all terminals
and base plate.
Mounting screw: M3.5
V
ISO
Junction temperature
Storage temperature
Module case operating temperature
Isolation voltage
Mounting torque
2500
0.78 ~ 1.27
Vrms
N·m
TOTAL SYSTEM
Note 2) : The item defines the maximum junction temperature for the power elements (IGBT/Diode) of the ASIPM to ensure safe operation.
However, these power elements can endure instantaneous junction temperature as high as 150
°
C. To make use of this additional
temperature allowance, a detailed study of the exact application conditions is required and, accordingly, necessary information is
to be provided before use.
Condition
Symbol
Item
Ratings
Typ.
Min.
THERMAL RESISTANCE
Max.
3.0
7.3
3.0
7.3
0.040
Unit
CASE TEMPERATURE MEASUREMENT POINT (3mm from the base surface)
(Fig. 3)
mA
mA
V
V
k
150
50
2.0
4.0
1.4
3.0
150
0.8
2.5
V
DH
Circuit Current
V
DL
Circuit Current
Input on threshold voltage
Input off threshold voltage
Input pull-up resistor
Min.
V
μ
s
μ
s
μ
s
μ
s
μ
s
3.5
2.0
1.4
4.0
1.6
1.2
0.5
2.2
0.9
0.2
I
DH
I
DL
V
th(on)
V
th(off)
R
i
V
CC
800V, Input = ON (One-Shot)
Tj = 125
°
C start
13.5V
V
DH
= V
DB
=
16.5V
V
CC
800V, Tj
125
°
C,
Ic < I
OL
(CL) operation level, Input = ON,
13.5V
V
DH
= V
DB
=
16.5V
V
DL
= 5V, V
DH
= 15V, V
CIN
= 5V
V
DL
= 5V, V
DH
= 15V, V
CIN
= 5V
V
FBr
ton
tc(on)
toff
tc(off)
trr
V
CE(sat)
V
EC
V
DL
= 5V, V
DH
= V
DB
= 15V Input = ON,
Tj = 25
°
C, Ic = 5A
Tj = 25
°
C, Ic = –5A, Input = OFF
Condition
Symbol
Item
Ratings
Typ.
Max.
Unit
No destruction
F
O
output by protection operation
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C, V
DH
= 15V , V
DB
= 15V, V
DL
= 5V unless otherwise noted)
Collector-emitter saturation
voltage
FWDi forward voltage
Brake IGBT
Collector-emitter saturation voltage
Brake diode forward voltage
V
CE(sat)Br
Tj = 25
°
C, I
F
= 5A, Input = OFF
1/2 Bridge inductive, Input = ON
V
CC
= 600V, Ic = 5A, Tj = 125
°
C
V
DL
= 5V, V
DH
= 15V, V
DB
= 15V
Note : ton, toff include delay time of the internal control
circuit.
V
DL
= 5V, V
DH
= 15V Input = ON, Tj = 25
°
C, Ic = 5A
Switching times
FWD reverse recovery time
Short circuit endurance
(Output, Arm, and Load,
Short Circuit Modes)
Switching SOA
0.3
3.6
3.5
3.6
V
V
V
No destruction
No protecting operation
No F
O
output
Integrated between input terminal-V
DH
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