參數(shù)資料
型號: PS11016
廠商: Powerex Power Semiconductors
英文描述: FLAT-BASE TYPE INSULATED TYPE
中文描述: 平性基地型絕緣型
文件頁數(shù): 4/6頁
文件大小: 408K
代理商: PS11016
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS11016
FLAT-BASE TYPE
INSULATED TYPE
Jan. 2000
Supply voltage ripple
Input on voltage
Input off voltage
PWM Input frequency
Arm shoot-through blocking time
Supply voltage
V
DH
,
V
DB
V
CIN(on)
V
CIN(off)
f
PWM
t
dead
10.0
10.5
16.50
18.00
11.55
t
d(read)
I
CL(H)
I
CL(L)
±
I
OL
SC
OT
OTr
UV
DH
UV
DHr
OV
DH
OV
DHr
UV
DB
UV
DBr
t
dV
I
FO(H)
I
FO(L)
0.77
2.97
t
xx
1
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C, V
DH
= 15V, V
DB
= 15V unless otherwise noted)
1
3.37
15
Idle
Active
Trip level
Reset level
Trip level
Reset level
Trip level
Reset level
Trip level
Reset level
Filter time
Idle
Active
Ic = 0A
Ic = I
OP
(200%)
Ic = –I
OP
(200%)
V
DH
= 15V, T
C
= –20
°
C ~ 100
°
C
Ic > I
OP
(200%), V
DH
= 15V
t
int
V
CO
V
C+
(200%)
V
C–
(200%)
|
V
CO
|
V
C+
V
C–
V
C
(200%)
T
C
= –20 ~ +100
°
C,
Tj
125
°
C
V
DH
= 15V
T
C
= –20
°
C ~ 100
°
C
(Fig. 4)
T
C
100
°
C, Tj
125
°
C
V
DH
= 15V, T
C
= –20
°
C ~ +100
°
C
Relates to corresponding inputs,
(Except brake part), T
C
= –20
°
C ~ +100
°
C
(Note 3)
PWM input frequency
Allowable input on-pulse width
Allowable input signal dead time for
blocking arm shoot-through
Input inter-lock sensing
Condition
Symbol
Ratings
Typ.
f
PWM
Min.
Max.
15
500
Unit
(Fig. 4)
|V
CO
-V
C
±
(200%)|
Correspond to max. 500
μ
s data hold period
only, Ic = I
OP
(200%)
After input signal trigger point
(Fig. 8)
Fault output current
Open collector output
V
D
= 15V, T
C
= –20
°
C ~ 100
°
C
Tj = 25
°
C
(Note 4)
(Fig. 7) (Note 5)
Analogue signal over all linear variation
Item
t
dead
Relates to corresponding input (Except break part)
Analogue signal linearity with output current
Offset change area vs temperature
Analogue signal output voltage limit
r
CH
Analogue signal data hold accuracy
Analogue signal reading time
Signal output current of
CL operation
(Fig. 5)
CL warning operation level
Short circuit over current trip level
2.5
1.87
4.0
–5
31.2
50.6
100
11.05
Open collector output
65
2.27
1.17
1
38.0
65.0
110
90
12.00
12.50
19.20
17.50
1.1
11.0
11.5
10
1
100
2.57
1.47
3.67
0.7
5
46.0
120
12.75
13.25
20.15
18.65
12.0
12.5
1
3
kHz
μ
s
μ
s
ns
V
V
V
mV
V
V
V
%
μ
s
μ
A
mA
A
A
°
C
°
C
V
V
V
V
V
V
μ
s
μ
A
mA
Over temperature
protection
Supply circuit under &
over voltage protection
V
DH
= 15V
(Note 3) : (a) Allowable minimum input on-pulse width : This item applies to P-side circuit only.
(b) Allowable maximum input on-pulse width : This item applies to both P-side and N-side circuits excluding the brake circuit.
(Note4) : CL output : The "current limit warning (CL) operation circuit outputs warning signal whenever the arm current exceeds this limit. The
circuit is reset automatically by the next input signal and thus, it operates on a pulse-by-pulse scheme.
(Note5) : The short circuit protection works instantaneously when a high short circuit current flows through an internal IGBT rising up momen-
tarily. The protection function is, thus meant primarily to protect the ASIPM against short circuit distraction. Therefore, this function is
not recommended to be used for any system load current regulation or any over load control as this might, cause a failure due to
excessive temperature rise. Instead, the analogue current output feature or the over load warning feature (CL) should be appropri-
ately used for such current regulation or over load control operation. In other words, the PWM signals to the ASIPM should be shut
down, in principle, and not to be restarted before the junction temperature would recover to normal, as soon as a fault is feed back
from its F
O1
pin of the ASIPM indicating a short circuit situation.
RECOMMENDED CONDITIONS
V
400 (max.)
Applied across P-N terminals
Applied between V
DH
-GND, C
BU+
-C
BU–
, C
BV+
-C
BV–
,
C
BW+
-C
BW–
Condition
Symbol
V
CC
Item
Ratings
Unit
V
DH
, V
DB
Control Supply voltage
Using application circuit
Using application circuit
15
±
1.5
±
1 (max.)
0 ~ 0.3
4.8 ~ 5.0
2 ~ 15
2.5 (min.)
V
V/
μ
s
V
V
kHz
μ
s
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