參數(shù)資料
型號(hào)： PS11016
廠商： Powerex Power Semiconductors
英文描述： FLAT-BASE TYPE INSULATED TYPE
中文描述： 平性基地型絕緣型
文件頁(yè)數(shù)： 3/6頁(yè)
文件大?。?/td> 408K
代理商： PS11016
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS11016
FLAT-BASE TYPE
INSULATED TYPE
Jan. 2000
Circuit current
Input on threshold voltage
Input off threshold voltage
Input pull-up resister
Min.
—
—
V
FBr
ton
tc(on)
toff
tc(off)
trr
TC
2.3
2.4
2.9
4.5
0.040
Collector-emitter saturation voltage
FWDi forward voltage
Brake IGBT
Collector-emitter saturation voltage
Brake diode forward voltage
V
CE(sat)
V
EC
Ratings
Typ.
—
—
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
—
—
—
—
—
Junction to case Thermal
Resistance
Condition
Symbol
T
j
T
stg
T
C
Item
Ratings
–20 ~ +125
–40 ~ +125
–20 ~ +100
Unit
°
C
°
C
°
C
(Note 2)
—
(Fig. 3)
60 Hz sinusoidal AC applied between all terminals and
the base plate for 1 minute.
Mounting screw: M3.5
V
iso
Junction temperature
Storage temperature
Module case operating temperature
Isolation voltage
Mounting torque
2500
0.78 ~ 1.27
Vrms
N·m
TOTAL SYSTEM
Note 2) The item defines the maximum junction temperature for the power elements (IGBT/Diode) of the ASIPM to ensure safe operation. How-
ever, these power elements can endure instantaneous junction temperature as high as 150
°
C instantaneously . To make use of this ad-
ditional temperature allowance, a detailed study of the exact application conditions is required and, accordingly, necessary information
is requested to be provided before use.
Condition
Symbol
Item
Ratings
Typ.
—
—
—
—
—
Inverter IGBT (1/6)
Inverter FWDi (1/6)
Brake IGBT
Brake FWDi
Case to fin, thermal grease applied
Rth(j-c)
Q
Rth(j-c)
F
Rth(j-c)
Q
Rth(j-c)
F
Rth(c-f)
Min.
THERMAL RESISTANCE
Max.
Unit
(Fig. 3)
CASE TEMPERATURE MEASUREMENT POINT (3mm from the base surface)
V
DH
= V
DB
= 15V, Input = ON, Tj = 25
°
C, Ic = 30A
Tj = 25
°
C, Ic = –30A, Input = OFF
V
DH
= 15V, Input = ON, Tj = 25
°
C, Ic = 15A
Condition
Symbol
Item
Max.
2.9
2.9
Unit
No destruction
F
O
output by protection operation
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C, V
DH
= 15V, V
DB
= 15V unless otherwise noted)
Contact Thermal Resistance
I
DH
V
th(on)
V
th(off)
R
i
No destruction
No protecting operation
No F
O
output
V
CE(sat)Br
Tj = 25
°
C, I
F
= 15A, Input = OFF
1/2 Bridge inductive, Input = ON
V
CC
= 300V, Ic = 30A, Tj = 125
°
C
V
DH
= 15V, V
DB
= 15V
Note : ton, toff include delay time of the internal control
circuit
V
CC
≤
400V, Input = ON (one-shot)
Tj = 125
°
C start
13.5V
≤
V
DH
= V
DB
≤
16.5V
V
CC
≤
400V, Tj
≤
125
°
C,
Ic < I
OL
(CL) operation level, Input = ON,
13.5V
≤
V
DH
= V
DB
≤
16.5V
V
DH
= 15V, V
CIN
= 5V
Switching times
FWD reverse recovery time
Short circuit endurance
(Output, Arm, and Load,
Short Circuit Modes)
Switching SOA
—
—
—
—
—
0.8
2.5
—
Integrated between input terminal-V
DH
—
0.35
—
—
0.35
1.3
0.5
—
1.4
3.0
150
—
0.7
0.15
3.5
0.9
2.0
1.0
150
2.0
4.0
—
2.9
1.8
—
V
V
V
V
μ
s
μ
s
μ
s
μ
s
μ
s
mA
V
V
k
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