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參數(shù)資料
| 型號： | PS11012 |
| 廠商： | Powerex Power Semiconductors |
| 英文描述： | FLAT-BASE TYPE INSULATED TYPE |
| 中文描述： | 平性基地型絕緣型 |
| 文件頁數(shù)： | 3/6頁 |
| 文件大小： | 409K |
| 代理商： | PS11012 |
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS11012
FLAT-BASE TYPE
INSULATED TYPE
Jan. 2000
TC
6.1
6.1
7.3
6.1
4.8
0.053
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
°
C/W
—
—
—
—
—
—
Junction to case Thermal
Resistance
Condition
Symbol
T
j
T
stg
T
C
Item
Ratings
–20 ~ +125
–40 ~ +125
–20 ~ +100
Unit
°
C
°
C
°
C
(Note 2)
—
(Fig. 3)
60 Hz sinusoidal AC applied between all terminals and
the base plate for 1 minute.
Mounting screw: M3.5
V
iso
—
Junction temperature
Storage temperature
Module case operating temperature
Isolation voltage
Mounting torque
2500
0.78 ~ 1.27
Vrms
kg·cm
TOTAL SYSTEM
Note 2) The item defines the maximum junction temperature for the power elements (IGBT/Diode) of the ASIPM to ensure safe operation. How-
ever, these power elements can endure junction temperature as high as 150
°
C instantaneously . To make use of this additional tem-
perature allowance, a detailed study of the exact application conditions is required and, accordingly, necessary information is requested
to be provided before use.
Condition
Symbol
Item
Ratings
Typ.
—
—
—
—
—
—
Inverter IGBT (1/6)
Inverter FWDi (1/6)
Brake IGBT
Brake FWDi
Converter Di (1/6)
Case to fin, thermal grease applied (1 Module)
Rth(j-c)
Q
Rth(j-c)
F
Rth(j-c)
QB
Rth(j-c)
FB
Rth(j-c)
FR
Rth(c-f)
Min.
THERMAL RESISTANCE
Max.
Unit
(Fig. 3)
CASE TEMPERATURE MEASUREMENT POINT (3mm from the base surface)
Contact Thermal Resistance
—
0.1
V
CC
≤
400V, Input = ON (one-shot)
Tj = 125
°
C start
13.5V
≤
V
DH
= V
DB
≤
16.5V
V
CC
≤
400V, Tj
≤
125
°
C,
Ic < I
OL
(CL) operation level, Input = ON
13.5V
≤
V
DH
= V
DB
≤
16.5V
V
V
—
—
V
FBr
I
RRM
V
FR
ton
tc(on)
toff
tc(off)
trr
Collector-emitter saturation voltage
FWDi forward voltage
Brake IGBT
Collector-emitter saturation voltage
Brake diode forward voltage
Converter diode reverse current
Converter diode voltage
Switching times
FWD reverse recovery time
Short circuit endurance
(Output, Arm, and Load,
Short Circuit Modes)
V
CE(sat)
V
EC
Ratings
Typ.
—
—
V
DH
= V
DB
= 15V, Input = ON, Tj = 25
°
C, I
C
= 4A
Tj = 25
°
C, I
C
= –4A, Input = OFF
Condition
Symbol
Item
Min.
Max.
2.9
2.9
Unit
No destruction
F
O
output by protection operation
ELECTRICAL CHARACTERISTICS
(Tj = 25
°
C, V
DH
= 15V, V
DB
= 15V unless otherwise noted)
No destruction
No protecting operation
No F
O
output
V
CE(sat)Br
V
DH
= 15V, Input = ON, Tj = 25
°
C, I
C
= 2A
Tj = 25
°
C, I
F
= 2A, Input = OFF
V
R
= V
RRM
, Tj = 125
°
C
Tj = 25
°
C, I
F
= 5A
1/2 Bridge inductive load, Input = ON
V
CC
= 300V, Ic = 4A, Tj = 125
°
C
V
DH
= 15V, V
DB
= 15V
Note : ton, toff include delay time of the internal control
circuit
Switching SOA
—
—
—
—
0.3
—
—
—
—
—
—
—
—
0.6
0.2
1.1
0.35
3.5
2.9
8
1.5
1.5
0.6
1.8
1.0
V
V
mA
V
μ
s
μ
s
μ
s
μ
s
μ
s
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| PS11016 | 功能描述:MOD IPM 3PHASE IGBT 600V 30A RoHS:否 類別:半導體模塊 >> 功率驅(qū)動器 系列:- 標準包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
| PS11017 | 功能描述:MOD IPM 3PHASE IGBT 600V 50A RoHS:否 類別:半導體模塊 >> 功率驅(qū)動器 系列:- 標準包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊 |
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