參數(shù)資料
型號： PS11012
廠商： Powerex Power Semiconductors
英文描述： FLAT-BASE TYPE INSULATED TYPE
中文描述： 平性基地型絕緣型
文件頁數(shù)： 2/6頁
文件大?。?/td> 409K
代理商： PS11012
MITSUBISHI SEMICONDUCTOR <Application Specific Intelligent Power Module>
PS11012
FLAT-BASE TYPE
INSULATED TYPE
Jan. 2000
Each output IGBT collector current
Brake IGBT collector current
Brake diode anode current
INTERNAL FUNCTIONS BLOCK DIAGRAM
(Fig. 2)
V
V
450
500
Applied between P2-N
Applied between P2-N, Surge-value
Applied between P-U, V, W, Br or U, V, W,
Br-N
Applied between P-U, V, W, Br or U, V, W,
Br-N
T
C
= 25
°
C
Note: “( )” means I
C
peak value
Supply voltage
Supply voltage (surge)
V
CC
V
CC(surge)
Condition
Symbol
Item
Ratings
Unit
MAXIMUM RATINGS
(Tj = 25
°
C)
INVERTER PART (Including Brake Part)
V
P
or V
N
V
P(S)
or V
N(S)
±
I
C
(
±
I
CP
)
I
C
(I
CP
)
I
F
(I
FP
)
Each output IGBT collector-emitter static voltage
Each output IGBT collector-emitter
switching surge voltage
600
600
±
4 (
±
8)
2 (4)
2 (4)
V
V
A
A
A
V
20
Fault output supply voltage
Fault output current
Current-limit warning (CL) output voltage
CL output current
Analogue current signal output current
Applied between V
DH
-GND, C
BU+
-C
BU–
,
C
BV+
-C
BV–
, C
BW+
-C
BW–
Applied between U
P
· V
P
· W
P
· U
N
· V
N
·
W
N
· B
r
-GND
Applied between F
O1
· F
O2
· F
O3
-GND
Sink current of F
O1
· F
O2
· F
O3
Applied between CL-GND
Sink current of CL
Sink current of CU · CV · CW
V
DH
, V
DB
Supply voltage
Symbol
Item
Ratings
Unit
CONTROL PART
Condition
V
FO
I
FO
V
CL
I
CL
I
CO
V
CIN
Input signal voltage
–0.5 ~ 7.5
–0.5 ~ 7
15
–0.5 ~ 7
15
±
1
V
V
mA
V
mA
mA
3
φ
rectifying circuit
1 cycle at 60Hz, peak value non-repetitive
Value for one cycle of surge current
Condition
Symbol
V
RRM
Ea
I
O
I
FSM
I
2
t
Item
Ratings
800
220
25
138
80
Unit
V
V
A
A
A
2
s
Repetitive peak reverse voltage
Recommended AC input voltage
DC output current
Surge (non-repetitive) forward current
I
2
t for fusing
CONVERTER PART
(15V line)
VDH
GND
CUCVCW
U
P
V
P
W
P
U
N
V
N
W
N
B
r
Each phase input (PWM)
(5V line) Note 2)
CL FO1 FO2 FO3
Fault output
(5V line) Note 3)
B
P1
P2
R
S
T
C
Z
N
M
W
V
U
AC200V line input
C3 ; 3.3
μ
F or more, tight tolerance, temp-compensated electrolytic type (Note : the value may change
depending on the type PWM control scheme used in the applied system)
C4 ; 2
μ
F R-category ceramic condenser for noise filtering.
C2 ;
3.3
μ
F or more
FO Logic
PCircuit
Level shifter
Drive Circuit
Drive Curcuit
Trig signal conditioning
Currcircuit
Pcircuit
Cfault sense
Z : Surge absorber.
C : AC filter (Ceramic condenser 2.2~6.5nF)
[Note : Additionally an appropriate Line-to line
surge absorber circuit maybe necessary
depending on the application environment].
AC 200V line
Brake resistor
Inrush prevention
Note 1) To prevent chances of signal oscillation, an RC coupling at each output is recommended. (see also Fig.10)
Note 2) By virtue of integrating an application specific type HVIC inside the module, direct coupling to CPU, without any opto or transformer isolation ispossible. (see also Fig.10)
Note 3) All these outputs are open collector type. Each signal line should be pulled up to plus side of the 5V power supply with approximately 5.1k
resistance. (see also Fig.10)
Note 4) The wiring between power DC link capacitor and P/N terminals should be as short as possible to protect the ASIPM against catastrophic high surge voltage. For extra
precaution, a small film type snubber capacitor (0.1~0.22
μ
F, high voltage type) is recommended to be mounted close to these P and N DC powerinput pins.
Analogue signal output corresponding to
each phase current (5V line) Note 1)
C
C
C
C
C
C
C
Application Specific Intelligent
Power Module
T.S.
C2
相關(guān)PDF資料
PDF描述
PS11013 FLAT-BASE TYPE INSULATED TYPE
PS11014 FLAT-BASE TYPE INSULATED TYPE
PS11015 FLAT-BASE TYPE INSULATED TYPE
PS11016 FLAT-BASE TYPE INSULATED TYPE
PS11017 FLAT-BASE TYPE INSULATED TYPE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PS11013 功能描述:MOD IPM 3PHASE IGBT 600V 8A RoHS:否 類別:半導(dǎo)體模塊 >> 功率驅(qū)動器 系列:- 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊
PS11014 功能描述:MOD IPM 3PHASE IGBT 600V 15A RoHS:否 類別:半導(dǎo)體模塊 >> 功率驅(qū)動器 系列:- 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊
PS11015 功能描述:MOD IPM 3PHASE IGBT 600V 20A RoHS:否 類別:半導(dǎo)體模塊 >> 功率驅(qū)動器 系列:- 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊
PS11016 功能描述:MOD IPM 3PHASE IGBT 600V 30A RoHS:否 類別:半導(dǎo)體模塊 >> 功率驅(qū)動器 系列:- 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊
PS11017 功能描述:MOD IPM 3PHASE IGBT 600V 50A RoHS:否 類別:半導(dǎo)體模塊 >> 功率驅(qū)動器 系列:- 標(biāo)準(zhǔn)包裝:15 系列:SPM® 類型:FET 配置:三相反相器 電流:1.8A 電壓:500V 電壓 - 隔離:1500Vrms 封裝/外殼:23-DIP 模塊
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