N-CHANNEL POWER MOSFET LBSS123LT1G FEATURE ? Pb-Free Package is available. DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LBSS123LT1G SA 3000/Tape&Reel LBSS123LT3G SA 10000/Tape&Reel MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 100 Vdc Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 μs) VGS VGSM ±20 ±40 Vdc Vpk Drain Current Continuous (Note 1.) Pulsed (Note 2.) ID IDM 0.17 0.68 Adc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board (Note 3.) TA = 25°C Derate above 25°C PD 225 1.8 mW mW/°C Thermal Resistance, Junction to Ambient R JA 556 °C/W Junction and Storage Temperature TJ, Tstg –55 to +150 °C 1. The Power Dissipation of the package may result in a lower continuous drain current. 2. Pulse Width 300 s, Duty Cycle 2.0%. 3. FR–5 = 1.0 0.75 0.062 in.