參數(shù)資料
型號： PMEM1505PG
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： PNP transistor/Schottky rectifier module
中文描述： 500 mA, 15 V, PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC, SC-88A, 5 PIN
文件頁數(shù)： 3/11頁
文件大小： 66K
代理商： PMEM1505PG
9397 750 12751
Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet
Rev. 01 — 26 May 2004
3 of 11
Philips Semiconductors
PMEM1505PG
PNP transistor/Schottky rectifier module
[1]
Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353.
[2]
Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1 cm
2
mounting pad for both
collector and cathode.
[3]
Solder point of collector or cathode tab.
6.
Thermal characteristics
[1]
For Schottky barrier rectifiers thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating will be available on request.
Solder point of collector or cathode tab.
[2]
[3]
Device mounted on a printed-circuit board, single-sided copper, tin-plated, 1 cm
2
mounting pad for both
collector and cathode.
[4]
Mounted on a FR4 printed-circuit board, single-sided copper, tin-plated, standard footprint for SOT353.
[5]
Mounted on a ceramic printed-circuit board, single-sided copper, tin-plated, standard footprint.
P
tot
total power dissipation
T
amb
≤
25
°
C
T
amb
≤
25
°
C
T
s
≤
55
°
C
[1]
-
-
-
-
200
250
800
150
mW
mW
mW
°
C
[2]
[3]
T
j
Schottky barrier rectifier
V
R
I
F
I
FSM
junction temperature
continuous reverse voltage
continuous forward current
non-repetitive peak forward
current
total power dissipation
-
-
-
20
0.5
5
V
A
A
t = 8.3 ms
square wave
T
amb
≤
25
°
C
T
amb
≤
25
°
C
T
s
≤
55
°
C
P
tot
[1]
-
-
-
-
200
250
800
125
mW
mW
mW
°
C
[2]
[3]
T
j
Combined device
P
tot
T
stg
T
amb
junction temperature
[2]
total power dissipation
storage temperature
operating ambient
temperature
T
amb
≤
25
°
C
[2]
-
65
65
300
+150
+150
mW
°
C
°
C
[2]
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Limiting values
…continued
Conditions
Min
Max
Unit
Table 6:
Symbol
Single device
R
th(j-s)
R
th(j-a)
Thermal characteristics
[1]
Parameter
Conditions
Typ
Unit
from junction to solder point
from junction to ambient
in free air
in free air
[2]
120
395
495
K/W
K/W
K/W
[3]
[4]
Combined device
R
th(j-a)
from junction to ambient
in free air
[5]
410
K/W
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