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參數(shù)資料
| 型號(hào)： | PMBTH81 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | PNP 1 GHz switching transistor |
| 中文描述： | UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SOT-23, 3 PIN |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大?。?/td> | 47K |
| 代理商： | PMBTH81 |
September 1995
3
Philips Semiconductors
Product specification
PNP 1 GHz switching transistor
PMBTH81
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL RESISTANCE
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
T
j
= 25
°
C
SYMBOL
PARAMETER
CONDITIONS
MIN.
65
MAX.
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
20
20
3
40
400
150
150
V
V
V
mA
mW
°
C
°
C
T
s
= 45
°
C (note 1)
SYMBOL
PARAMETER
THERMAL RESISTANCE
R
th j-s
from junction to soldering point (note 1)
260 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
(BR)CBO
V
(BR)CEO
collector-base breakdown voltage
collector-emitter breakdown
voltage
emitter-base breakdown voltage
collector-emitter saturation voltage
base-emitter ON voltage
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter capacitance
collector-base capacitance
transition frequency
open emitter; I
C
= 10
μ
A; I
E
= 0
open base; I
C
= 1 mA; I
B
= 0
20
20
V
V
V
(BR)EBO
V
CE sat
V
BE on
I
CBO
I
EBO
h
FE
C
ce
C
cb
f
T
open collector; I
E
= 10
μ
A; I
C
= 0
I
C
= 5 mA; I
B
= 0.5 mA
V
CE
= 10 V; I
C
= 5 mA
V
CB
= 10 V; I
E
= 0
V
EB
= 2 V; I
C
= 0
V
CE
= 10 V; I
C
= 5 mA
V
CB
= 10 V; I
B
= 0; f = 1 MHz
V
CB
= 10 V; I
E
= 0; f = 1 MHz
V
CE
= 10 V; I
C
= 5 mA;
f = 100 MHz; T
amb
= 25
°
C
3
60
600
0.5
0.9
100
100
0.65
0.85
V
V
V
nA
nA
pF
pF
MHz
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